JPS5787056A - Method and device for strengthening neutralization of ion beam of positive charge - Google Patents

Method and device for strengthening neutralization of ion beam of positive charge

Info

Publication number
JPS5787056A
JPS5787056A JP14641581A JP14641581A JPS5787056A JP S5787056 A JPS5787056 A JP S5787056A JP 14641581 A JP14641581 A JP 14641581A JP 14641581 A JP14641581 A JP 14641581A JP S5787056 A JPS5787056 A JP S5787056A
Authority
JP
Japan
Prior art keywords
neutralization
strengthening
ion beam
positive charge
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14641581A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6212625B2 (it
Inventor
Aasaa Robaatoson Debitsudo
Reonaado Taanaa Nooman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of JPS5787056A publication Critical patent/JPS5787056A/ja
Publication of JPS6212625B2 publication Critical patent/JPS6212625B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP14641581A 1980-09-24 1981-09-18 Method and device for strengthening neutralization of ion beam of positive charge Granted JPS5787056A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19029780A 1980-09-24 1980-09-24

Publications (2)

Publication Number Publication Date
JPS5787056A true JPS5787056A (en) 1982-05-31
JPS6212625B2 JPS6212625B2 (it) 1987-03-19

Family

ID=22700763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14641581A Granted JPS5787056A (en) 1980-09-24 1981-09-18 Method and device for strengthening neutralization of ion beam of positive charge

Country Status (6)

Country Link
JP (1) JPS5787056A (it)
CH (1) CH653806A5 (it)
DE (1) DE3136787A1 (it)
FR (1) FR2490873A1 (it)
GB (1) GB2084792B (it)
NL (1) NL190209C (it)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5882519A (ja) * 1981-11-12 1983-05-18 Toshiba Corp 半導体のイオン注入方法
JPS59196600A (ja) * 1983-04-21 1984-11-07 工業技術院長 中性粒子注入法およびその装置
JPS6072228A (ja) * 1983-09-28 1985-04-24 Toshiba Corp 半導体基板への不純物ド−ピング方法
JPS61230252A (ja) * 1985-04-05 1986-10-14 Hitachi Ltd イオン打込機
JPS62103952A (ja) * 1985-10-29 1987-05-14 Toshiba Corp イオン注入装置
JPS62154447A (ja) * 1985-12-25 1987-07-09 Sumitomo Eaton Noba Kk ウエハ−の帯電抑制装置
JPS63126220A (ja) * 1986-11-14 1988-05-30 Mitsubishi Electric Corp 不純物添加方法
JPS63184256A (ja) * 1987-01-27 1988-07-29 Tokyo Electron Ltd イオン注入装置
US4916311A (en) * 1987-03-12 1990-04-10 Mitsubishi Denki Kabushiki Kaisha Ion beaming irradiating apparatus including ion neutralizer

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4675530A (en) * 1985-07-11 1987-06-23 Eaton Corporation Charge density detector for beam implantation
EP3389078A1 (fr) * 2017-04-13 2018-10-17 The Swatch Group Research and Development Ltd Procédé d'implantation d'ions multichargés sur une surface d'un objet à traiter et installation pour la mise en oeuvre de ce procédé

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53136798A (en) * 1977-05-05 1978-11-29 Ibm Ion beam bombardment device
JPS54124879A (en) * 1978-03-22 1979-09-28 Nippon Telegr & Teleph Corp <Ntt> Ion beam deposition
JPS56165192A (en) * 1980-05-26 1981-12-18 Fuji Electric Co Ltd Circle and arcuate generating system

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676672A (en) * 1969-02-03 1972-07-11 Benjamin B Meckel Large diameter ion beam apparatus with an apertured plate electrode to maintain uniform flux density across the beam
US3847115A (en) * 1973-05-02 1974-11-12 Nasa System for depositing thin films
US4118630A (en) * 1977-05-05 1978-10-03 International Business Machines Corporation Ion implantation apparatus with a cooled structure controlling the surface potential of a target surface
FR2389998B1 (it) * 1977-05-05 1981-11-20 Ibm

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53136798A (en) * 1977-05-05 1978-11-29 Ibm Ion beam bombardment device
JPS54124879A (en) * 1978-03-22 1979-09-28 Nippon Telegr & Teleph Corp <Ntt> Ion beam deposition
JPS56165192A (en) * 1980-05-26 1981-12-18 Fuji Electric Co Ltd Circle and arcuate generating system

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5882519A (ja) * 1981-11-12 1983-05-18 Toshiba Corp 半導体のイオン注入方法
JPH0517699B2 (it) * 1981-11-12 1993-03-09 Tokyo Shibaura Electric Co
JPS59196600A (ja) * 1983-04-21 1984-11-07 工業技術院長 中性粒子注入法およびその装置
JPH0223021B2 (it) * 1983-04-21 1990-05-22 Kogyo Gijutsuin
JPS6072228A (ja) * 1983-09-28 1985-04-24 Toshiba Corp 半導体基板への不純物ド−ピング方法
JPS61230252A (ja) * 1985-04-05 1986-10-14 Hitachi Ltd イオン打込機
JPH0526295B2 (it) * 1985-04-05 1993-04-15 Hitachi Ltd
JPS62103952A (ja) * 1985-10-29 1987-05-14 Toshiba Corp イオン注入装置
JPS62154447A (ja) * 1985-12-25 1987-07-09 Sumitomo Eaton Noba Kk ウエハ−の帯電抑制装置
JPS63126220A (ja) * 1986-11-14 1988-05-30 Mitsubishi Electric Corp 不純物添加方法
JPS63184256A (ja) * 1987-01-27 1988-07-29 Tokyo Electron Ltd イオン注入装置
US4916311A (en) * 1987-03-12 1990-04-10 Mitsubishi Denki Kabushiki Kaisha Ion beaming irradiating apparatus including ion neutralizer

Also Published As

Publication number Publication date
DE3136787C2 (it) 1992-01-23
NL190209C (nl) 1993-12-01
FR2490873B1 (it) 1985-05-17
JPS6212625B2 (it) 1987-03-19
CH653806A5 (de) 1986-01-15
GB2084792A (en) 1982-04-15
NL8104377A (nl) 1982-04-16
GB2084792B (en) 1984-08-30
DE3136787A1 (de) 1982-08-26
NL190209B (nl) 1993-07-01
FR2490873A1 (fr) 1982-03-26

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