JPS5785276A - Measuring method for thermal resistance of semiconductor laser - Google Patents

Measuring method for thermal resistance of semiconductor laser

Info

Publication number
JPS5785276A
JPS5785276A JP16152080A JP16152080A JPS5785276A JP S5785276 A JPS5785276 A JP S5785276A JP 16152080 A JP16152080 A JP 16152080A JP 16152080 A JP16152080 A JP 16152080A JP S5785276 A JPS5785276 A JP S5785276A
Authority
JP
Japan
Prior art keywords
laser
value
measured
thermal resistance
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16152080A
Other languages
Japanese (ja)
Inventor
Masato Nakajima
Kenji Sekido
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16152080A priority Critical patent/JPS5785276A/en
Publication of JPS5785276A publication Critical patent/JPS5785276A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To measure the thermal resistance accurately by substantially measuring the value of a temperature coefficient at every laser to be measured and fixing the magnitude of bias currents at predetermined value. CONSTITUTION:DC bias currents IO are applied to the semiconductor laser to be measured 1 by means of a DC power supply, and power PO consumed at the laser 1 at that time, the value QO of a temperature parameter of the laser 1 and the temperature TCO of a case are measured. Pulse bias currents having IO peak value and a d duty cycle are applied by means of a pulse power supply 11, and the quantity of change DELTAPO of the power PO consumed at the laser 1 at that time and the quantity DELTATC of change of the case temperature TCO of the laser 1 required for equalizing the value of a temperature sensing parameter with the original value QO by adding an external heat source are measured. Accordingly, the thermal resistance Rth of the laser 1 is given DELTATC/DELTAPO.
JP16152080A 1980-11-17 1980-11-17 Measuring method for thermal resistance of semiconductor laser Pending JPS5785276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16152080A JPS5785276A (en) 1980-11-17 1980-11-17 Measuring method for thermal resistance of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16152080A JPS5785276A (en) 1980-11-17 1980-11-17 Measuring method for thermal resistance of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5785276A true JPS5785276A (en) 1982-05-27

Family

ID=15736631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16152080A Pending JPS5785276A (en) 1980-11-17 1980-11-17 Measuring method for thermal resistance of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5785276A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58216483A (en) * 1982-06-09 1983-12-16 Mitsubishi Electric Corp Pulse laser device
JP2013143539A (en) * 2012-01-12 2013-07-22 Toyota Motor Corp Thermal resistance measurement apparatus, thermal resistance measurement method, and temperature sensor calibration method
CN104634811A (en) * 2013-11-13 2015-05-20 中国人民解放军海军工程大学 Non-contact vibrationless low-temperature solid interface thermal resistance testing arrangement

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58216483A (en) * 1982-06-09 1983-12-16 Mitsubishi Electric Corp Pulse laser device
JP2013143539A (en) * 2012-01-12 2013-07-22 Toyota Motor Corp Thermal resistance measurement apparatus, thermal resistance measurement method, and temperature sensor calibration method
CN104634811A (en) * 2013-11-13 2015-05-20 中国人民解放军海军工程大学 Non-contact vibrationless low-temperature solid interface thermal resistance testing arrangement
CN104634811B (en) * 2013-11-13 2017-03-22 中国人民解放军海军工程大学 Non-contact vibrationless low-temperature solid interface thermal resistance testing arrangement

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