JPS5785269A - Semiconductor radiation detector - Google Patents
Semiconductor radiation detectorInfo
- Publication number
- JPS5785269A JPS5785269A JP55162222A JP16222280A JPS5785269A JP S5785269 A JPS5785269 A JP S5785269A JP 55162222 A JP55162222 A JP 55162222A JP 16222280 A JP16222280 A JP 16222280A JP S5785269 A JPS5785269 A JP S5785269A
- Authority
- JP
- Japan
- Prior art keywords
- radiation detector
- semiconductor radiation
- semiconductor
- detector
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
- H10F30/2955—Shallow PN junction radiation detectors
Landscapes
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55162222A JPS5785269A (en) | 1980-11-18 | 1980-11-18 | Semiconductor radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55162222A JPS5785269A (en) | 1980-11-18 | 1980-11-18 | Semiconductor radiation detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5785269A true JPS5785269A (en) | 1982-05-27 |
| JPH0154871B2 JPH0154871B2 (enExample) | 1989-11-21 |
Family
ID=15750281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55162222A Granted JPS5785269A (en) | 1980-11-18 | 1980-11-18 | Semiconductor radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5785269A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61174778A (ja) * | 1985-01-30 | 1986-08-06 | Fuji Electric Co Ltd | 半導体中性子線検出器の製造方法 |
| JP2015087115A (ja) * | 2013-10-28 | 2015-05-07 | 日立Ｇｅニュークリア・エナジー株式会社 | 中性子数分析装置および放射線計測装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5260085A (en) * | 1975-11-12 | 1977-05-18 | Tdk Corp | Neutron detector |
-
1980
- 1980-11-18 JP JP55162222A patent/JPS5785269A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5260085A (en) * | 1975-11-12 | 1977-05-18 | Tdk Corp | Neutron detector |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61174778A (ja) * | 1985-01-30 | 1986-08-06 | Fuji Electric Co Ltd | 半導体中性子線検出器の製造方法 |
| JP2015087115A (ja) * | 2013-10-28 | 2015-05-07 | 日立Ｇｅニュークリア・エナジー株式会社 | 中性子数分析装置および放射線計測装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0154871B2 (enExample) | 1989-11-21 |
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