JPS5785269A - Semiconductor radiation detector - Google Patents

Semiconductor radiation detector

Info

Publication number
JPS5785269A
JPS5785269A JP55162222A JP16222280A JPS5785269A JP S5785269 A JPS5785269 A JP S5785269A JP 55162222 A JP55162222 A JP 55162222A JP 16222280 A JP16222280 A JP 16222280A JP S5785269 A JPS5785269 A JP S5785269A
Authority
JP
Japan
Prior art keywords
region
neutron rays
prompt neutron
electrodes
injected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55162222A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0154871B2 (enExample
Inventor
Noritada Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP55162222A priority Critical patent/JPS5785269A/ja
Publication of JPS5785269A publication Critical patent/JPS5785269A/ja
Publication of JPH0154871B2 publication Critical patent/JPH0154871B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
    • H10F30/2955—Shallow PN junction radiation detectors

Landscapes

  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
JP55162222A 1980-11-18 1980-11-18 Semiconductor radiation detector Granted JPS5785269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55162222A JPS5785269A (en) 1980-11-18 1980-11-18 Semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55162222A JPS5785269A (en) 1980-11-18 1980-11-18 Semiconductor radiation detector

Publications (2)

Publication Number Publication Date
JPS5785269A true JPS5785269A (en) 1982-05-27
JPH0154871B2 JPH0154871B2 (enExample) 1989-11-21

Family

ID=15750281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55162222A Granted JPS5785269A (en) 1980-11-18 1980-11-18 Semiconductor radiation detector

Country Status (1)

Country Link
JP (1) JPS5785269A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174778A (ja) * 1985-01-30 1986-08-06 Fuji Electric Co Ltd 半導体中性子線検出器の製造方法
JP2015087115A (ja) * 2013-10-28 2015-05-07 日立Ｇｅニュークリア・エナジー株式会社 中性子数分析装置および放射線計測装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5260085A (en) * 1975-11-12 1977-05-18 Tdk Corp Neutron detector

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5260085A (en) * 1975-11-12 1977-05-18 Tdk Corp Neutron detector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174778A (ja) * 1985-01-30 1986-08-06 Fuji Electric Co Ltd 半導体中性子線検出器の製造方法
JP2015087115A (ja) * 2013-10-28 2015-05-07 日立Ｇｅニュークリア・エナジー株式会社 中性子数分析装置および放射線計測装置

Also Published As

Publication number Publication date
JPH0154871B2 (enExample) 1989-11-21

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