JPS5260085A - Neutron detector - Google Patents

Neutron detector

Info

Publication number
JPS5260085A
JPS5260085A JP50135905A JP13590575A JPS5260085A JP S5260085 A JPS5260085 A JP S5260085A JP 50135905 A JP50135905 A JP 50135905A JP 13590575 A JP13590575 A JP 13590575A JP S5260085 A JPS5260085 A JP S5260085A
Authority
JP
Japan
Prior art keywords
neutron detector
detector
neutron
boron phosphide
alpha
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50135905A
Other languages
Japanese (ja)
Other versions
JPS5343032B2 (en
Inventor
Katsuto Nagano
Shozo Sasa
Takeshi Nakada
Kazuhiko Ihaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP50135905A priority Critical patent/JPS5260085A/en
Publication of JPS5260085A publication Critical patent/JPS5260085A/en
Publication of JPS5343032B2 publication Critical patent/JPS5343032B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)

Abstract

PURPOSE:To obtain a neutron detector of high reliability and high sensitivity by using boron phosphide as a neutron sensing material and combining boron phosphide with a detector for alpha charge particles composed of a semiconductor.
JP50135905A 1975-11-12 1975-11-12 Neutron detector Granted JPS5260085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50135905A JPS5260085A (en) 1975-11-12 1975-11-12 Neutron detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50135905A JPS5260085A (en) 1975-11-12 1975-11-12 Neutron detector

Publications (2)

Publication Number Publication Date
JPS5260085A true JPS5260085A (en) 1977-05-18
JPS5343032B2 JPS5343032B2 (en) 1978-11-16

Family

ID=15162557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50135905A Granted JPS5260085A (en) 1975-11-12 1975-11-12 Neutron detector

Country Status (1)

Country Link
JP (1) JPS5260085A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5785269A (en) * 1980-11-18 1982-05-27 Fuji Electric Co Ltd Semiconductor radiation detector
US5726453A (en) * 1996-09-30 1998-03-10 Westinghouse Electric Corporation Radiation resistant solid state neutron detector
KR20020073241A (en) * 2001-03-13 2002-09-23 미쓰비시덴키 가부시키가이샤 Semiconductor device and method for the fabrication
JPWO2009022377A1 (en) * 2007-08-10 2010-11-11 学校法人 大阪電気通信大学 Silicon carbide for radiation detection element and radiation detection method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5785269A (en) * 1980-11-18 1982-05-27 Fuji Electric Co Ltd Semiconductor radiation detector
JPH0154871B2 (en) * 1980-11-18 1989-11-21 Fuji Electric Co Ltd
US5726453A (en) * 1996-09-30 1998-03-10 Westinghouse Electric Corporation Radiation resistant solid state neutron detector
KR20020073241A (en) * 2001-03-13 2002-09-23 미쓰비시덴키 가부시키가이샤 Semiconductor device and method for the fabrication
JPWO2009022377A1 (en) * 2007-08-10 2010-11-11 学校法人 大阪電気通信大学 Silicon carbide for radiation detection element and radiation detection method

Also Published As

Publication number Publication date
JPS5343032B2 (en) 1978-11-16

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