JPS5785219A - Supporter of semiconductor substrate - Google Patents

Supporter of semiconductor substrate

Info

Publication number
JPS5785219A
JPS5785219A JP16081080A JP16081080A JPS5785219A JP S5785219 A JPS5785219 A JP S5785219A JP 16081080 A JP16081080 A JP 16081080A JP 16081080 A JP16081080 A JP 16081080A JP S5785219 A JPS5785219 A JP S5785219A
Authority
JP
Japan
Prior art keywords
supporter
silicon
semiconductor substrate
concave
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16081080A
Other languages
Japanese (ja)
Inventor
Masanori Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16081080A priority Critical patent/JPS5785219A/en
Publication of JPS5785219A publication Critical patent/JPS5785219A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)

Abstract

PURPOSE:To void hillock and reduce time lag by mounting a supporter made from silicon or carbonic silicon in a concave of quartz plate and accumulating a semiconductor substrate on a supporter. CONSTITUTION:A concave 13 is provided to mount a semiconductor substrate 2 on one main surface of a supporter base 11 made from high-pure quartz. A supporter 12 made from silicon or carbonic silicon almost equal in thermal capacity with the substrate 2 is mounted at the concave 13 bottom. This prevents silicon from hillock such as scattering from the supporter base 11 or a reaction container and sticking to the substrate 2.
JP16081080A 1980-11-17 1980-11-17 Supporter of semiconductor substrate Pending JPS5785219A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16081080A JPS5785219A (en) 1980-11-17 1980-11-17 Supporter of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16081080A JPS5785219A (en) 1980-11-17 1980-11-17 Supporter of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5785219A true JPS5785219A (en) 1982-05-27

Family

ID=15722911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16081080A Pending JPS5785219A (en) 1980-11-17 1980-11-17 Supporter of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5785219A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6363608A (en) * 1986-09-03 1988-03-22 Lion Corp Composition for oral cavity application
KR100861564B1 (en) * 2000-10-19 2008-10-02 에이에스엠 저펜 가부시기가이샤 Semiconductor substrate-supporting apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6363608A (en) * 1986-09-03 1988-03-22 Lion Corp Composition for oral cavity application
KR100861564B1 (en) * 2000-10-19 2008-10-02 에이에스엠 저펜 가부시기가이샤 Semiconductor substrate-supporting apparatus

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