JPS5784166A - 3-5 group compound semiconductor device - Google Patents
3-5 group compound semiconductor deviceInfo
- Publication number
- JPS5784166A JPS5784166A JP16052080A JP16052080A JPS5784166A JP S5784166 A JPS5784166 A JP S5784166A JP 16052080 A JP16052080 A JP 16052080A JP 16052080 A JP16052080 A JP 16052080A JP S5784166 A JPS5784166 A JP S5784166A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- compound semiconductor
- group compound
- high temperature
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910000952 Be alloy Inorganic materials 0.000 abstract 2
- 229910001297 Zn alloy Inorganic materials 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16052080A JPS5784166A (en) | 1980-11-13 | 1980-11-13 | 3-5 group compound semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16052080A JPS5784166A (en) | 1980-11-13 | 1980-11-13 | 3-5 group compound semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5784166A true JPS5784166A (en) | 1982-05-26 |
JPS6230709B2 JPS6230709B2 (US08063081-20111122-C00242.png) | 1987-07-03 |
Family
ID=15716727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16052080A Granted JPS5784166A (en) | 1980-11-13 | 1980-11-13 | 3-5 group compound semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5784166A (US08063081-20111122-C00242.png) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4816881A (en) * | 1985-06-27 | 1989-03-28 | United State Of America As Represented By The Secretary Of The Navy | A TiW diffusion barrier for AuZn ohmic contacts to p-type InP |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6254610U (US08063081-20111122-C00242.png) * | 1985-09-26 | 1987-04-04 | ||
JPS6336413U (US08063081-20111122-C00242.png) * | 1986-08-22 | 1988-03-09 | ||
JPH0355377Y2 (US08063081-20111122-C00242.png) * | 1986-08-22 | 1991-12-10 |
-
1980
- 1980-11-13 JP JP16052080A patent/JPS5784166A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4816881A (en) * | 1985-06-27 | 1989-03-28 | United State Of America As Represented By The Secretary Of The Navy | A TiW diffusion barrier for AuZn ohmic contacts to p-type InP |
Also Published As
Publication number | Publication date |
---|---|
JPS6230709B2 (US08063081-20111122-C00242.png) | 1987-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5249916A (en) | Material for electric contact consisting of ag-metal oxides | |
JPS5784166A (en) | 3-5 group compound semiconductor device | |
JPS5439573A (en) | Compound semiconductor device | |
JPS536213A (en) | Carbon electrode coated with antioxidant for al electrolysis | |
JPS56123338A (en) | Electrical contact material | |
JPS5516429A (en) | Electrode for ga1-x a xas | |
JPS5326664A (en) | Formation of ohmic contact | |
JPS53110460A (en) | Electrode of compound semiconductor | |
JPS5661175A (en) | Thin-film solar cell | |
JPS5228262A (en) | Process for assembling semiconductor device | |
JPS5380161A (en) | Electrode formation of semiconductor | |
JPS56110230A (en) | Forming method of electrode on semiconductor device | |
JPS51126762A (en) | Integrated circuit manufacturing process | |
JPS5529142A (en) | Electrode forming method for group 3-5 compound semiconductor device | |
JPS52146176A (en) | Formation of electrode in semiconductor device | |
JPS5352997A (en) | Thin film type heating resistor body | |
JPS52144272A (en) | Forming method of electrode in semiconductor device | |
JPS5784139A (en) | Manufacture of semiconductor device | |
JPS53123075A (en) | Group iii-v compound semiconductor device | |
JPS5477064A (en) | Electrode forming method of compound semiconductors | |
JPS5793535A (en) | Semiconductor device | |
JPS5469978A (en) | Production of compound semiconductor light emitting elements | |
JPS5223270A (en) | Method of manufacturing lead frames for semiconductors | |
JPS52106272A (en) | Semiconductor device | |
JPS5389657A (en) | Electrode forming method of group iii-v compound semiconductor |