JPS5783905A - Pulse impatt diode oscillator - Google Patents

Pulse impatt diode oscillator

Info

Publication number
JPS5783905A
JPS5783905A JP15972880A JP15972880A JPS5783905A JP S5783905 A JPS5783905 A JP S5783905A JP 15972880 A JP15972880 A JP 15972880A JP 15972880 A JP15972880 A JP 15972880A JP S5783905 A JPS5783905 A JP S5783905A
Authority
JP
Japan
Prior art keywords
pulse
voltage
oscillation frequency
impatt diode
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15972880A
Other languages
Japanese (ja)
Inventor
Toshiaki Sekino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15972880A priority Critical patent/JPS5783905A/en
Publication of JPS5783905A publication Critical patent/JPS5783905A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H03B9/141—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance and comprising a voltage sensitive element, e.g. varactor

Abstract

PURPOSE:To narrow an oscillation frequency band, by applying a variable reactance element with a signal proportional to variations in the bias voltage of an IMPATT diode. CONSTITUTION:When a pulse (a) is applied from the terminal 3 of an IMPATT diode 1, its junction part temperature Tj rises within the pulse period with time and when the pulse current is ceased, it falls. Therefore, the voltage V of the IMPATT diode 1 appearing at the terminal 3 has a breakdown voltage rising according to a rise in the junction part temperature Tj. An oscillation frequency (f), on the other hand, decreases with time within the pulse period. As the voltage of a varactor diode 4 is raised, its junction capacity decreases and the oscillation frequency increases. For this purpose, the voltage variations DELTAV(t) of the IMPATT diode 1 are detected and applied to the varactor diode 4 through a variable reactance element control circuit 7, suppressing variations DELTAf(t) in oscillation frequency.
JP15972880A 1980-11-13 1980-11-13 Pulse impatt diode oscillator Pending JPS5783905A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15972880A JPS5783905A (en) 1980-11-13 1980-11-13 Pulse impatt diode oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15972880A JPS5783905A (en) 1980-11-13 1980-11-13 Pulse impatt diode oscillator

Publications (1)

Publication Number Publication Date
JPS5783905A true JPS5783905A (en) 1982-05-26

Family

ID=15699972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15972880A Pending JPS5783905A (en) 1980-11-13 1980-11-13 Pulse impatt diode oscillator

Country Status (1)

Country Link
JP (1) JPS5783905A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052712U (en) * 1983-09-20 1985-04-13 三菱電機株式会社 Pulse operated microwave semiconductor oscillator

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS511579A (en) * 1974-06-25 1976-01-08 Kobe Steel Ltd KYOKAZAISONOYOBISE IKEIHO

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS511579A (en) * 1974-06-25 1976-01-08 Kobe Steel Ltd KYOKAZAISONOYOBISE IKEIHO

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052712U (en) * 1983-09-20 1985-04-13 三菱電機株式会社 Pulse operated microwave semiconductor oscillator

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