JPS5782297A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS5782297A
JPS5782297A JP15773780A JP15773780A JPS5782297A JP S5782297 A JPS5782297 A JP S5782297A JP 15773780 A JP15773780 A JP 15773780A JP 15773780 A JP15773780 A JP 15773780A JP S5782297 A JPS5782297 A JP S5782297A
Authority
JP
Japan
Prior art keywords
relief
word line
excessive
bit
generating circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15773780A
Other languages
Japanese (ja)
Other versions
JPS6325440B2 (en
Inventor
Junzo Yamada
Junichi Inoue
Tsuneo Mano
Nobuaki Ieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP15773780A priority Critical patent/JPS5782297A/en
Publication of JPS5782297A publication Critical patent/JPS5782297A/en
Publication of JPS6325440B2 publication Critical patent/JPS6325440B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices

Abstract

PURPOSE:To access a relief bit in high speed, by providing an excessive word line drive clock generating circuit separately, in a redundant constitution semiconductor memory performing the relief of defective bits. CONSTITUTION:A redundant constitution semiconductor memory performing defective bit relief outputs a signal from a selection signal generating circuit 14, since an output 26 is selected from an excessive decoder 25 when a defective bit address is applied as external address inputs 1-4, a word line drive clock generator 15 is made inactive and an excessive word line drive clock generating circuit 29 is activated. Thus, independently of selection/non-selection of outputs 10-13 of a decoder 5, word lines 21-24 are made inactive with a word driver 16 and an excessive word line 27 is activated. Thus, no defective bit is accessed and the relief bit is accessed.
JP15773780A 1980-11-11 1980-11-11 Semiconductor storage device Granted JPS5782297A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15773780A JPS5782297A (en) 1980-11-11 1980-11-11 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15773780A JPS5782297A (en) 1980-11-11 1980-11-11 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5782297A true JPS5782297A (en) 1982-05-22
JPS6325440B2 JPS6325440B2 (en) 1988-05-25

Family

ID=15656247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15773780A Granted JPS5782297A (en) 1980-11-11 1980-11-11 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5782297A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59203299A (en) * 1983-05-06 1984-11-17 Nec Corp Clock generator of memory with redundancy bit
JPS6142800A (en) * 1984-08-02 1986-03-01 シーメンス、アクチエンゲゼルシヤフト Integrated writing-reading memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3422402A (en) * 1965-12-29 1969-01-14 Ibm Memory systems for using storage devices containing defective bits
JPS5227228A (en) * 1975-08-25 1977-03-01 Mitsubishi Electric Corp Semiconductor memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3422402A (en) * 1965-12-29 1969-01-14 Ibm Memory systems for using storage devices containing defective bits
JPS5227228A (en) * 1975-08-25 1977-03-01 Mitsubishi Electric Corp Semiconductor memory

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59203299A (en) * 1983-05-06 1984-11-17 Nec Corp Clock generator of memory with redundancy bit
JPH0250559B2 (en) * 1983-05-06 1990-11-02 Nippon Electric Co
JPS6142800A (en) * 1984-08-02 1986-03-01 シーメンス、アクチエンゲゼルシヤフト Integrated writing-reading memory

Also Published As

Publication number Publication date
JPS6325440B2 (en) 1988-05-25

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