JPS5780814A - Transistor device - Google Patents

Transistor device

Info

Publication number
JPS5780814A
JPS5780814A JP55157186A JP15718680A JPS5780814A JP S5780814 A JPS5780814 A JP S5780814A JP 55157186 A JP55157186 A JP 55157186A JP 15718680 A JP15718680 A JP 15718680A JP S5780814 A JPS5780814 A JP S5780814A
Authority
JP
Japan
Prior art keywords
beta1
current amplification
beta2
emitters
composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55157186A
Other languages
Japanese (ja)
Inventor
Masamichi Manabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp, Pioneer Electronic Corp filed Critical Pioneer Corp
Priority to JP55157186A priority Critical patent/JPS5780814A/en
Publication of JPS5780814A publication Critical patent/JPS5780814A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To change a current amplification factor continuously, by providing plural transistors which have emitters and bases connected commonly respectively and have different current amplification factors. CONSTITUTION:Emitters and bases of two PNP transistors (TR)Q1 and Q2 are connected commonly respectively, and a variable resistance VR1 for setting a current amplificaton factor is connected between collectors of both TRs. An emitter common connection point E, a base common connection point B, and a collector terminal C of the TRQ1 are used as the emitter, the base, and the collector of a composite TR respectively. When current amplification factors of TRsQ1 and Q2 are denoted as beta1 and beta2(beta1<beta2) respectively, the variable resistance VR1 is varied from zero to the infinite to set the current amplification factor of the composite TR to an opional value between the minimum beta1 to a maximum (beta1+beta2)/2.
JP55157186A 1980-11-07 1980-11-07 Transistor device Pending JPS5780814A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55157186A JPS5780814A (en) 1980-11-07 1980-11-07 Transistor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55157186A JPS5780814A (en) 1980-11-07 1980-11-07 Transistor device

Publications (1)

Publication Number Publication Date
JPS5780814A true JPS5780814A (en) 1982-05-20

Family

ID=15644069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55157186A Pending JPS5780814A (en) 1980-11-07 1980-11-07 Transistor device

Country Status (1)

Country Link
JP (1) JPS5780814A (en)

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