JPS5780740A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5780740A
JPS5780740A JP15653180A JP15653180A JPS5780740A JP S5780740 A JPS5780740 A JP S5780740A JP 15653180 A JP15653180 A JP 15653180A JP 15653180 A JP15653180 A JP 15653180A JP S5780740 A JPS5780740 A JP S5780740A
Authority
JP
Japan
Prior art keywords
layer
wiring
aluminum
semiconductor device
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15653180A
Other languages
Japanese (ja)
Inventor
Shigeo Kashiwagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15653180A priority Critical patent/JPS5780740A/en
Publication of JPS5780740A publication Critical patent/JPS5780740A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the junction breakdown due to metallic diffusion in a semiconductor device by forming the first wiring layer of metal of high purity for an impurity layer on an Si substrate and superposing the second wiring layer of the metal-Si alloy thereon, thereby maintaining preferable contact therebetween. CONSTITUTION:A wiring layer 8 of Al-Si alloy containing approx. 1% of Si is sputtered via a thin aluminum film 7 of high purity on the N<+> type layer 2 of a P type Si substrate 1. According to this configuration, after the aluminum is diffused to certain degree to the layer 2, it does not diffuse any more, and according no junction breakdown occurs. Since the aluminum and silicon are alloyed to certain degree, the contacting resistance between the wiring tuber and the layer 2 can be maintained low.
JP15653180A 1980-11-07 1980-11-07 Manufacture of semiconductor device Pending JPS5780740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15653180A JPS5780740A (en) 1980-11-07 1980-11-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15653180A JPS5780740A (en) 1980-11-07 1980-11-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5780740A true JPS5780740A (en) 1982-05-20

Family

ID=15629821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15653180A Pending JPS5780740A (en) 1980-11-07 1980-11-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5780740A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135280A (en) * 1974-09-20 1976-03-25 Hitachi Ltd HANDOTA ISOCHI

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135280A (en) * 1974-09-20 1976-03-25 Hitachi Ltd HANDOTA ISOCHI

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