JPS5778151A - Dividing method for semiconductor element - Google Patents

Dividing method for semiconductor element

Info

Publication number
JPS5778151A
JPS5778151A JP15415480A JP15415480A JPS5778151A JP S5778151 A JPS5778151 A JP S5778151A JP 15415480 A JP15415480 A JP 15415480A JP 15415480 A JP15415480 A JP 15415480A JP S5778151 A JPS5778151 A JP S5778151A
Authority
JP
Japan
Prior art keywords
blade
cutting
silicone rubber
wafer
dividing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15415480A
Other languages
Japanese (ja)
Inventor
Tadashi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP15415480A priority Critical patent/JPS5778151A/en
Publication of JPS5778151A publication Critical patent/JPS5778151A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To prevent the isolation of a protective film at the time of dividing and cutting a wafer buried with silicone rubber by cutting and dividing the wafer with etching grooves on the element side face with a punch projecting with a cutting blade at the lower end face. CONSTITUTION:Etching grooves 6a are formed around an element side face at a wafer formed with a plurality of elements 6, silicone rubber 5 is filled and cured in the grooves 6a, and are placed on a base 8 via an adhesive sheet 7. A punch 1 projected with a cutting blade 2 at the lower end to surround the element is pressed to the resin layer 5, the layer 5 is cut, and an element 6 is attracted in vacuum into the recess 3 surrounded by the blade 2 and is isolated. The isolated pellet 9 is removed from the recess 3 with air press-fitted to a hole 4, and the respective elements are sequentially divided. In this manner the respective elements are readily divided in the predetermined shape, and are pushed and cut by the blade, thereby isolating the silicone rubber layer 5 to prevent the deterioration of the characteristics.
JP15415480A 1980-10-31 1980-10-31 Dividing method for semiconductor element Pending JPS5778151A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15415480A JPS5778151A (en) 1980-10-31 1980-10-31 Dividing method for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15415480A JPS5778151A (en) 1980-10-31 1980-10-31 Dividing method for semiconductor element

Publications (1)

Publication Number Publication Date
JPS5778151A true JPS5778151A (en) 1982-05-15

Family

ID=15578023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15415480A Pending JPS5778151A (en) 1980-10-31 1980-10-31 Dividing method for semiconductor element

Country Status (1)

Country Link
JP (1) JPS5778151A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8153464B2 (en) * 2005-10-18 2012-04-10 International Rectifier Corporation Wafer singulation process

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5177065A (en) * 1974-12-27 1976-07-03 Fujitsu Ltd HANDOTAISOSHINOTEKISHUTSUHOHO
JPS51103764A (en) * 1975-03-08 1976-09-13 New Nippon Electric Co Handotaisochino seizohoho
JPS5431686A (en) * 1977-08-16 1979-03-08 Nec Corp Film shearing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5177065A (en) * 1974-12-27 1976-07-03 Fujitsu Ltd HANDOTAISOSHINOTEKISHUTSUHOHO
JPS51103764A (en) * 1975-03-08 1976-09-13 New Nippon Electric Co Handotaisochino seizohoho
JPS5431686A (en) * 1977-08-16 1979-03-08 Nec Corp Film shearing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8153464B2 (en) * 2005-10-18 2012-04-10 International Rectifier Corporation Wafer singulation process

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