JPS5776890A - Quase particle injection control type superdoductor loose coupling element - Google Patents
Quase particle injection control type superdoductor loose coupling elementInfo
- Publication number
- JPS5776890A JPS5776890A JP55152904A JP15290480A JPS5776890A JP S5776890 A JPS5776890 A JP S5776890A JP 55152904 A JP55152904 A JP 55152904A JP 15290480 A JP15290480 A JP 15290480A JP S5776890 A JPS5776890 A JP S5776890A
- Authority
- JP
- Japan
- Prior art keywords
- loose coupling
- loose
- superdoductor
- quase
- particle injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
PURPOSE:To improve integration degree, reliability and switching sensitivity and increase degree of freedom for circuit design by a method wherein a quasi particle injecting electrode is provided to a loose coupling part of a Josephson coupling and coupling characteristic are controlled. CONSTITUTION:In a Josephson element 10 which is composed of a couple of superconductors 1, 2 and a loose coupling part 3 by which the superconductors are electrically loose-coupled, the third electrode 4 for quasi particle injection made of regular conductive metal, super conductive metal or semiconductor is fitted to the loose coupling part 3 by a insulative barrier 5. With above configuration the Josephson coupling voltage is controlled and switched by applying a voltage to the electrode 4, so that the integration degree is increased.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55152904A JPS592389B2 (en) | 1980-10-30 | 1980-10-30 | Quasi-particle injection controlled superconducting weak coupling device |
US06/603,984 US4589001A (en) | 1980-07-09 | 1984-04-26 | Quasiparticle injection control type superconducting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55152904A JPS592389B2 (en) | 1980-10-30 | 1980-10-30 | Quasi-particle injection controlled superconducting weak coupling device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5776890A true JPS5776890A (en) | 1982-05-14 |
JPS592389B2 JPS592389B2 (en) | 1984-01-18 |
Family
ID=15550669
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55152904A Expired JPS592389B2 (en) | 1980-07-09 | 1980-10-30 | Quasi-particle injection controlled superconducting weak coupling device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS592389B2 (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0144217A2 (en) * | 1983-11-30 | 1985-06-12 | Fujitsu Limited | Superconducting device |
JPS6288381A (en) * | 1985-10-11 | 1987-04-22 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Superconducting switching apparatus |
JPS62222683A (en) * | 1986-03-25 | 1987-09-30 | Nec Corp | Superconductive-semiconductor three terminal element |
JPS631085A (en) * | 1986-06-20 | 1988-01-06 | Nec Corp | Superconducting three-terminal element |
JPS63114281A (en) * | 1986-10-31 | 1988-05-19 | Fujitsu Ltd | Superconducting switching element |
JPH01283886A (en) * | 1988-05-10 | 1989-11-15 | Matsushita Electric Ind Co Ltd | Superconducting triode |
US4884111A (en) * | 1984-11-05 | 1989-11-28 | Toshikazu Nishino | Superconducting device |
JPH0380577A (en) * | 1989-05-12 | 1991-04-05 | Matsushita Electric Ind Co Ltd | Superconducting element and manufacture thereof |
JPH03274773A (en) * | 1990-03-23 | 1991-12-05 | Toshiba Corp | Superconducting element |
JPH03274776A (en) * | 1990-03-23 | 1991-12-05 | Toshiba Corp | Superconducting element |
JPH04229668A (en) * | 1990-05-21 | 1992-08-19 | Internatl Business Mach Corp <Ibm> | Surerconductive device structure using anisotropy of energy gap of material |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04164476A (en) * | 1990-10-27 | 1992-06-10 | Norio Kikuchi | Game apparatus |
-
1980
- 1980-10-30 JP JP55152904A patent/JPS592389B2/en not_active Expired
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5012303A (en) * | 1983-11-30 | 1991-04-30 | Fujitsu Limited | Superconducting device |
JPS60117691A (en) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | Super conductive device |
EP0144217A2 (en) * | 1983-11-30 | 1985-06-12 | Fujitsu Limited | Superconducting device |
JPH0315355B2 (en) * | 1983-11-30 | 1991-02-28 | Fujitsu Ltd | |
US4884111A (en) * | 1984-11-05 | 1989-11-28 | Toshikazu Nishino | Superconducting device |
JPS6288381A (en) * | 1985-10-11 | 1987-04-22 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Superconducting switching apparatus |
JPS62222683A (en) * | 1986-03-25 | 1987-09-30 | Nec Corp | Superconductive-semiconductor three terminal element |
JPS631085A (en) * | 1986-06-20 | 1988-01-06 | Nec Corp | Superconducting three-terminal element |
JPS63114281A (en) * | 1986-10-31 | 1988-05-19 | Fujitsu Ltd | Superconducting switching element |
JPH01283886A (en) * | 1988-05-10 | 1989-11-15 | Matsushita Electric Ind Co Ltd | Superconducting triode |
JPH0380577A (en) * | 1989-05-12 | 1991-04-05 | Matsushita Electric Ind Co Ltd | Superconducting element and manufacture thereof |
US5481119A (en) * | 1989-05-12 | 1996-01-02 | Matsushita Electric Industrial Co., Ltd. | Superconducting weak-link bridge |
JPH03274773A (en) * | 1990-03-23 | 1991-12-05 | Toshiba Corp | Superconducting element |
JPH03274776A (en) * | 1990-03-23 | 1991-12-05 | Toshiba Corp | Superconducting element |
JPH04229668A (en) * | 1990-05-21 | 1992-08-19 | Internatl Business Mach Corp <Ibm> | Surerconductive device structure using anisotropy of energy gap of material |
Also Published As
Publication number | Publication date |
---|---|
JPS592389B2 (en) | 1984-01-18 |
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