JPS5771586A - Integrated static memory cell and method of driving same - Google Patents

Integrated static memory cell and method of driving same

Info

Publication number
JPS5771586A
JPS5771586A JP56133916A JP13391681A JPS5771586A JP S5771586 A JPS5771586 A JP S5771586A JP 56133916 A JP56133916 A JP 56133916A JP 13391681 A JP13391681 A JP 13391681A JP S5771586 A JPS5771586 A JP S5771586A
Authority
JP
Japan
Prior art keywords
memory cell
static memory
driving same
integrated static
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56133916A
Other languages
English (en)
Inventor
Ji Oorudohamu Uiriamu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of JPS5771586A publication Critical patent/JPS5771586A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory

Landscapes

  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP56133916A 1980-08-27 1981-08-26 Integrated static memory cell and method of driving same Pending JPS5771586A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803032333 DE3032333A1 (de) 1980-08-27 1980-08-27 Monolithische statische speicherzelle und verfahren zu ihrem betrieb

Publications (1)

Publication Number Publication Date
JPS5771586A true JPS5771586A (en) 1982-05-04

Family

ID=6110526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56133916A Pending JPS5771586A (en) 1980-08-27 1981-08-26 Integrated static memory cell and method of driving same

Country Status (4)

Country Link
US (1) US4396996A (ja)
EP (1) EP0046551A3 (ja)
JP (1) JPS5771586A (ja)
DE (1) DE3032333A1 (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58185093A (ja) * 1982-04-21 1983-10-28 Mitsubishi Electric Corp マイクロプロセツサ
US4652926A (en) * 1984-04-23 1987-03-24 Massachusetts Institute Of Technology Solid state imaging technique
US4821233A (en) * 1985-09-19 1989-04-11 Xilinx, Incorporated 5-transistor memory cell with known state on power-up
IT1191561B (it) * 1986-06-03 1988-03-23 Sgs Microelettrica Spa Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamente
US5517634A (en) * 1992-06-23 1996-05-14 Quantum Corporation Disk drive system including a DRAM array and associated method for programming initial information into the array
US5391909A (en) * 1992-10-13 1995-02-21 Hughes Aircraft Company Detection of electron-beam scanning of a substrate
JP3328971B2 (ja) * 1992-11-06 2002-09-30 ソニー株式会社 スタティックｒａｍ
FR2724256B1 (fr) * 1994-09-02 1997-01-03 Commissariat Energie Atomique Procede de production de memoires a acces aleatoire de type statique a prechargement ou de memoires mortes
US5986962A (en) * 1998-07-23 1999-11-16 International Business Machines Corporation Internal shadow latch
US7181650B2 (en) * 2003-06-02 2007-02-20 Atmel Corporation Fault tolerant data storage circuit
FR2923646A1 (fr) * 2007-11-09 2009-05-15 Commissariat Energie Atomique Cellule memoire sram dotee de transistors a structure multi-canaux verticale
US10308540B2 (en) * 2014-10-03 2019-06-04 J.S. Meyer Engineering, P.C. Systems and methods for processing organic compounds

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826193A (ja) * 1971-08-06 1973-04-05
JPS4979186A (ja) * 1972-12-04 1974-07-31
JPS5143354A (ja) * 1974-10-11 1976-04-14 Riken Keikinzoku Kogyo Kk Aruminiumugokinkatazaino oshidashisekeiho
JPS5197945A (ja) * 1975-02-25 1976-08-28
JPS54136236A (en) * 1978-04-14 1979-10-23 Nec Corp Readout and write-in enable memory

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3493786A (en) * 1967-05-02 1970-02-03 Rca Corp Unbalanced memory cell
US3626387A (en) * 1968-12-24 1971-12-07 Ibm Fet storage-threshold voltage changed by irradiation
US3636530A (en) * 1969-09-10 1972-01-18 Litton Systems Inc Nonvolatile direct storage bistable circuit
US4070655A (en) * 1976-11-05 1978-01-24 The United States Of America As Represented By The Secretary Of The Air Force Virtually nonvolatile static random access memory device
US4190849A (en) * 1977-09-19 1980-02-26 Motorola, Inc. Electronic-beam programmable semiconductor device structure
JPS54146935A (en) 1978-05-10 1979-11-16 Nec Corp Mask programmable read/write memory
JPS5843838B2 (ja) * 1979-02-28 1983-09-29 富士通株式会社 読取り専用メモリ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826193A (ja) * 1971-08-06 1973-04-05
JPS4979186A (ja) * 1972-12-04 1974-07-31
JPS5143354A (ja) * 1974-10-11 1976-04-14 Riken Keikinzoku Kogyo Kk Aruminiumugokinkatazaino oshidashisekeiho
JPS5197945A (ja) * 1975-02-25 1976-08-28
JPS54136236A (en) * 1978-04-14 1979-10-23 Nec Corp Readout and write-in enable memory

Also Published As

Publication number Publication date
EP0046551A2 (de) 1982-03-03
US4396996A (en) 1983-08-02
DE3032333A1 (de) 1982-04-22
EP0046551A3 (de) 1984-03-28

Similar Documents

Publication Publication Date Title
JPS5592967A (en) Minimizing method of dataasegment number in lexicon memory
DE3175450D1 (en) Fet memory cell structure and process
DE3176209D1 (en) Load cell and method of manufacturing the same
ZA832571B (en) Hydrogen storage materials and method of making same
DE3163588D1 (en) Liquid-crystal display cell and method of manufacturing same
JPS5593254A (en) Readdonly memory and method of programming same
GB2075997B (en) Stable emulsions of polyols and crosslinkers for polyurethanes
JPS57134969A (en) N-p-n lateral transistor array and method of forming same
JPS5773968A (en) Memory cell structure and method of producing same
JPS57212784A (en) Method of reducing unbalance of cell
JPS5771586A (en) Integrated static memory cell and method of driving same
JPS5793578A (en) Mos memory cell and method of producing same
EP0187237A3 (en) Dram cell and method
JPS57104261A (en) Film transistor array and method of producing same
JPS55151368A (en) Memory cell* method of driving and manufacturing same
EP0180026A3 (en) Dram cell and method
EP0177026A3 (en) Cassette loading device and method
JPS5783049A (en) Mos dynamic memory cell and method of producing same
GB2066565B (en) Structured solar cell and method of making same
JPS567468A (en) Dynamic memory cell and method of manufacturing same
GB8603505D0 (en) Static memory cell
JPS57132193A (en) Method of and apparatus for reducing memory place
JPS5730274A (en) Holding member and method of inserting same
JPS5696856A (en) Semiconductor memory cell and method of manufacturing same
JPS5637667A (en) Method of manufacturing monolithic static memory cell