JPS577152A - Constant voltage element - Google Patents
Constant voltage elementInfo
- Publication number
- JPS577152A JPS577152A JP8162680A JP8162680A JPS577152A JP S577152 A JPS577152 A JP S577152A JP 8162680 A JP8162680 A JP 8162680A JP 8162680 A JP8162680 A JP 8162680A JP S577152 A JPS577152 A JP S577152A
- Authority
- JP
- Japan
- Prior art keywords
- constant voltage
- resistor
- power source
- block
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
Abstract
PURPOSE:To highly stabilize the output voltage against changes in the temperature by producing an Si substrate so integrated that a constant current circuit is connected to the input power source with one end thereof joined to one end of the power source and the output end thereof to a constant voltage output terminal while the other end of the power source is grounded in common. CONSTITUTION:A P type Si substrate 100 is separated with a P<+> layer 101. An N-P constant voltage diode 4 and a P type diffused resistor 6 are provided on a block 10 while a P-N-P transistor 5 is formed on a block 20 with a P-collector surrounding a P emitter. An Al film 18 is provided to connect the element whereby a constant current circuit 11 is formed. An N emitter is provided in a P base on the block 30 on which is formed a constant voltage circuit 12 having a vertical P-N-P transistor 9, a P type diffused resistor 7, a base resistor 17 and an N-P constant voltage diode 8. With such an arrangement, the positive constant voltage element 4 and the resistor 6 cancel VBE of the negative element 5 while the positive element 8 does VBE of the negative element 9 in the temperature coefficient thereby highly stabilizing the output voltage over the temperature changing range.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8162680A JPS577152A (en) | 1980-06-17 | 1980-06-17 | Constant voltage element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8162680A JPS577152A (en) | 1980-06-17 | 1980-06-17 | Constant voltage element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS577152A true JPS577152A (en) | 1982-01-14 |
Family
ID=13751532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8162680A Pending JPS577152A (en) | 1980-06-17 | 1980-06-17 | Constant voltage element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577152A (en) |
-
1980
- 1980-06-17 JP JP8162680A patent/JPS577152A/en active Pending
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