JPS5771165A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5771165A
JPS5771165A JP55147923A JP14792380A JPS5771165A JP S5771165 A JPS5771165 A JP S5771165A JP 55147923 A JP55147923 A JP 55147923A JP 14792380 A JP14792380 A JP 14792380A JP S5771165 A JPS5771165 A JP S5771165A
Authority
JP
Japan
Prior art keywords
substrate
electric potential
capacitor
circuit
conductive layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55147923A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0318345B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55147923A priority Critical patent/JPS5771165A/ja
Publication of JPS5771165A publication Critical patent/JPS5771165A/ja
Publication of JPH0318345B2 publication Critical patent/JPH0318345B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP55147923A 1980-10-22 1980-10-22 Semiconductor device Granted JPS5771165A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55147923A JPS5771165A (en) 1980-10-22 1980-10-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147923A JPS5771165A (en) 1980-10-22 1980-10-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5771165A true JPS5771165A (en) 1982-05-01
JPH0318345B2 JPH0318345B2 (enrdf_load_stackoverflow) 1991-03-12

Family

ID=15441138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55147923A Granted JPS5771165A (en) 1980-10-22 1980-10-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5771165A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198753A (ja) * 1983-12-13 1985-10-08 フェアチャイルド　セミコンダクタ　コーポレーション 超ｌｓｉ集積回路における信号伝播損失を減少させる方法及び装置
US5594279A (en) * 1992-11-12 1997-01-14 Texas Instruments Incorporated Semiconductor device having shield wiring for noise suppression
EP0875944A1 (en) * 1997-04-21 1998-11-04 Lsi Logic Corporation Capacitors with silicized polysilicon shielding in digital CMOS process
EP0903783A1 (fr) * 1997-09-22 1999-03-24 STMicroelectronics SA Réalisation d'un condensateur intermétallique
US6262469B1 (en) * 1998-03-25 2001-07-17 Advanced Micro Devices, Inc. Capacitor for use in a capacitor divider that has a floating gate transistor as a corresponding capacitor
JP2020181884A (ja) * 2019-04-25 2020-11-05 合肥晶合集成電路有限公司 容量性半導体素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113184A (en) * 1977-03-23 1977-09-22 Toshiba Corp Semiconductor integrated circuit
JPS5448490A (en) * 1977-08-06 1979-04-17 Philips Nv Semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113184A (en) * 1977-03-23 1977-09-22 Toshiba Corp Semiconductor integrated circuit
JPS5448490A (en) * 1977-08-06 1979-04-17 Philips Nv Semiconductor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198753A (ja) * 1983-12-13 1985-10-08 フェアチャイルド　セミコンダクタ　コーポレーション 超ｌｓｉ集積回路における信号伝播損失を減少させる方法及び装置
US5594279A (en) * 1992-11-12 1997-01-14 Texas Instruments Incorporated Semiconductor device having shield wiring for noise suppression
EP0875944A1 (en) * 1997-04-21 1998-11-04 Lsi Logic Corporation Capacitors with silicized polysilicon shielding in digital CMOS process
EP0903783A1 (fr) * 1997-09-22 1999-03-24 STMicroelectronics SA Réalisation d'un condensateur intermétallique
FR2768852A1 (fr) * 1997-09-22 1999-03-26 Sgs Thomson Microelectronics Realisation d'un condensateur intermetallique
US6262469B1 (en) * 1998-03-25 2001-07-17 Advanced Micro Devices, Inc. Capacitor for use in a capacitor divider that has a floating gate transistor as a corresponding capacitor
JP2020181884A (ja) * 2019-04-25 2020-11-05 合肥晶合集成電路有限公司 容量性半導体素子

Also Published As

Publication number Publication date
JPH0318345B2 (enrdf_load_stackoverflow) 1991-03-12

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