JPS5769592A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS5769592A
JPS5769592A JP14519580A JP14519580A JPS5769592A JP S5769592 A JPS5769592 A JP S5769592A JP 14519580 A JP14519580 A JP 14519580A JP 14519580 A JP14519580 A JP 14519580A JP S5769592 A JPS5769592 A JP S5769592A
Authority
JP
Japan
Prior art keywords
gate
rom
potential
floating
erasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14519580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6143797B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Iwahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14519580A priority Critical patent/JPS5769592A/ja
Publication of JPS5769592A publication Critical patent/JPS5769592A/ja
Publication of JPS6143797B2 publication Critical patent/JPS6143797B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
JP14519580A 1980-10-17 1980-10-17 Semiconductor storage device Granted JPS5769592A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14519580A JPS5769592A (en) 1980-10-17 1980-10-17 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14519580A JPS5769592A (en) 1980-10-17 1980-10-17 Semiconductor storage device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP60075556A Division JPS60242598A (ja) 1985-04-10 1985-04-10 半導体記憶装置
JP60075555A Division JPS60242597A (ja) 1985-04-10 1985-04-10 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS5769592A true JPS5769592A (en) 1982-04-28
JPS6143797B2 JPS6143797B2 (enrdf_load_stackoverflow) 1986-09-30

Family

ID=15379612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14519580A Granted JPS5769592A (en) 1980-10-17 1980-10-17 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5769592A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5295096A (en) * 1988-07-11 1994-03-15 Mitsubishi Denki Kabushiki Kaisha NAND type EEPROM and operating method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5295096A (en) * 1988-07-11 1994-03-15 Mitsubishi Denki Kabushiki Kaisha NAND type EEPROM and operating method therefor

Also Published As

Publication number Publication date
JPS6143797B2 (enrdf_load_stackoverflow) 1986-09-30

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