JPS5765908A - Bias circuit - Google Patents

Bias circuit

Info

Publication number
JPS5765908A
JPS5765908A JP55143498A JP14349880A JPS5765908A JP S5765908 A JPS5765908 A JP S5765908A JP 55143498 A JP55143498 A JP 55143498A JP 14349880 A JP14349880 A JP 14349880A JP S5765908 A JPS5765908 A JP S5765908A
Authority
JP
Japan
Prior art keywords
base
trq1
supplied
transistor
trq2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55143498A
Other languages
Japanese (ja)
Inventor
Kenichi Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55143498A priority Critical patent/JPS5765908A/en
Publication of JPS5765908A publication Critical patent/JPS5765908A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers

Abstract

PURPOSE:To compensate the voltage drop due to a resistance through which a bias voltage is supplied to a transistor, by providing a tansistor of a conduction type different from that of said transistor with bases connected commonly. CONSTITUTION:A bias voltage is supplied from a voltage source V0 through a resistance RB1 to the base of an NPN transistor (TR)Q1. The collector current is supplied to the TRQ1 from an NPN TRQ2, and the base of a PNP TRQ3 is connected to the base of the TRQ2 to make base currents of TRs Q2 and Q3 equal to each other. A PNP TRQ4 is connected to the base of the TRQ1, and TRs Q3 and Q4 are connected in series. An AC signal is given to the base of the TRQ1 trough a capacitor, and the signal is supplied from the emitter of the TRQ1 to a differential amplifier.
JP55143498A 1980-10-13 1980-10-13 Bias circuit Pending JPS5765908A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55143498A JPS5765908A (en) 1980-10-13 1980-10-13 Bias circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55143498A JPS5765908A (en) 1980-10-13 1980-10-13 Bias circuit

Publications (1)

Publication Number Publication Date
JPS5765908A true JPS5765908A (en) 1982-04-21

Family

ID=15340109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55143498A Pending JPS5765908A (en) 1980-10-13 1980-10-13 Bias circuit

Country Status (1)

Country Link
JP (1) JPS5765908A (en)

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