JPS575353A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS575353A
JPS575353A JP2932181A JP2932181A JPS575353A JP S575353 A JPS575353 A JP S575353A JP 2932181 A JP2932181 A JP 2932181A JP 2932181 A JP2932181 A JP 2932181A JP S575353 A JPS575353 A JP S575353A
Authority
JP
Japan
Prior art keywords
layer
transistor
type semiconductor
impurity density
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2932181A
Other languages
Japanese (ja)
Inventor
Junichi Nishizawa
Yasunori Mochida
Terumoto Nonaka
Takashi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Gakki Co Ltd
Original Assignee
Nippon Gakki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Gakki Co Ltd filed Critical Nippon Gakki Co Ltd
Priority to JP2932181A priority Critical patent/JPS575353A/en
Publication of JPS575353A publication Critical patent/JPS575353A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To suppress the power loss of a semiconductor integrated circuit device by employing an insulated gate field effect transistor for the injector transistor of an I<2>L and a junction field effect transistor for driver transistor, thereby improving the switching speed. CONSTITUTION:An n type semiconductor layer 52 having 10<12>-10<15>/cm<3> of impurity density is formed in a thickness of 2-10mum on an n type semiconductor substrate 51 having 10<18>-10<21>/cm<3> of impurity density. Then, p type semiconductor regions 54, 55 having 1-3mum of depth and 10<18>-10<20>/cm<3> of impurity density are selectively formed on the layer 52. A gate electrode 73 is formed via a gate insulating film 72g on the surface of a semiconductor region disposed between the layers 54 and 55. The layer 54 and the layer 55 brought in opposed position with the layer 54 form the source and the drain of an injector transistor Qi1, the residual layer 55 forms the gate of a driver transistor Qd2. Thus, a logic element having high carrier injection efficiency and small carrier storage effect can be obtained.
JP2932181A 1981-03-03 1981-03-03 Semiconductor integrated circuit device Pending JPS575353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2932181A JPS575353A (en) 1981-03-03 1981-03-03 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2932181A JPS575353A (en) 1981-03-03 1981-03-03 Semiconductor integrated circuit device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP51079578A Division JPS608628B2 (en) 1976-07-05 1976-07-05 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS575353A true JPS575353A (en) 1982-01-12

Family

ID=12272951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2932181A Pending JPS575353A (en) 1981-03-03 1981-03-03 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS575353A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH023936A (en) * 1988-01-16 1990-01-09 Link Analytical Ltd Junction type field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH023936A (en) * 1988-01-16 1990-01-09 Link Analytical Ltd Junction type field effect transistor

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