JPS57500434A - - Google Patents

Info

Publication number
JPS57500434A
JPS57500434A JP56501203A JP50120381A JPS57500434A JP S57500434 A JPS57500434 A JP S57500434A JP 56501203 A JP56501203 A JP 56501203A JP 50120381 A JP50120381 A JP 50120381A JP S57500434 A JPS57500434 A JP S57500434A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56501203A
Other languages
Japanese (ja)
Other versions
JPH0317903B2 (OSRAM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS57500434A publication Critical patent/JPS57500434A/ja
Publication of JPH0317903B2 publication Critical patent/JPH0317903B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/938—Vapor deposition or gas diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
    • Y10T428/12063—Nonparticulate metal component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Conductive Materials (AREA)
JP56501203A 1980-03-21 1981-03-13 Expired JPH0317903B2 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/131,922 US4336118A (en) 1980-03-21 1980-03-21 Methods for making deposited films with improved microstructures

Publications (2)

Publication Number Publication Date
JPS57500434A true JPS57500434A (OSRAM) 1982-03-11
JPH0317903B2 JPH0317903B2 (OSRAM) 1991-03-11

Family

ID=22451613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56501203A Expired JPH0317903B2 (OSRAM) 1980-03-21 1981-03-13

Country Status (7)

Country Link
US (2) US4336118A (OSRAM)
EP (1) EP0048732A1 (OSRAM)
JP (1) JPH0317903B2 (OSRAM)
CA (1) CA1156968A (OSRAM)
DE (1) DE3140611T1 (OSRAM)
GB (1) GB2083505B (OSRAM)
WO (1) WO1981002694A1 (OSRAM)

Families Citing this family (64)

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US4520039A (en) * 1982-09-23 1985-05-28 Sovonics Solar Systems Compositionally varied materials and method for synthesizing the materials
US4664960A (en) * 1982-09-23 1987-05-12 Energy Conversion Devices, Inc. Compositionally varied materials and method for synthesizing the materials
US4705613A (en) * 1984-04-16 1987-11-10 Eastman Kodak Company Sputtering method of making thin film head having improved saturation magnetization
US4539089A (en) * 1984-06-29 1985-09-03 International Business Machines Corporation Method for depositing material with nanometer dimensions
CA1247464A (en) * 1985-05-13 1988-12-28 Hiroaki Nakamura Method for forming a planarized thin film
US4654269A (en) * 1985-06-21 1987-03-31 Fairchild Camera & Instrument Corp. Stress relieved intermediate insulating layer for multilayer metalization
CH665428A5 (de) * 1985-07-26 1988-05-13 Balzers Hochvakuum Verfahren zur beschichtung von mikrovertiefungen.
US4891112A (en) * 1985-11-12 1990-01-02 Eastman Kodak Company Sputtering method for reducing hillocking in aluminum layers formed on substrates
DE3680653D1 (de) * 1985-12-28 1991-09-05 Canon Kk Vorrichtung zur bildung eines abgeschiedenen films.
DE3601439C1 (de) * 1986-01-20 1987-04-09 Glyco Metall Werke Schichtverbundwerkstoff,insbesondere fuer Gleit- und Reibelemente,sowie Verfahren zu seiner Herstellung
US4690746A (en) * 1986-02-24 1987-09-01 Genus, Inc. Interlayer dielectric process
US4756810A (en) * 1986-12-04 1988-07-12 Machine Technology, Inc. Deposition and planarizing methods and apparatus
JP2602276B2 (ja) * 1987-06-30 1997-04-23 株式会社日立製作所 スパツタリング方法とその装置
JP2501118B2 (ja) * 1988-06-17 1996-05-29 忠弘 大見 半導体装置の製造方法
US4944858A (en) * 1988-12-08 1990-07-31 United Technologies Corporation Method for applying diffusion aluminide coating
US4988421A (en) * 1989-01-12 1991-01-29 Ford Motor Company Method of toughening diamond coated tools
US5419822A (en) * 1989-02-28 1995-05-30 Raytheon Company Method for applying a thin adherent layer
KR950009939B1 (ko) * 1990-11-30 1995-09-01 가부시끼가이샤 히다찌세이사꾸쇼 박막 형성 방법 및 그에 의해 형성된 반도체 장치
US5556713A (en) * 1995-04-06 1996-09-17 Southwest Research Institute Diffusion barrier for protective coatings
US6264812B1 (en) 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US6254746B1 (en) 1996-05-09 2001-07-03 Applied Materials, Inc. Recessed coil for generating a plasma
US6368469B1 (en) * 1996-05-09 2002-04-09 Applied Materials, Inc. Coils for generating a plasma and for sputtering
KR100489918B1 (ko) * 1996-05-09 2005-08-04 어플라이드 머티어리얼스, 인코포레이티드 플라즈마발생및스퍼터링용코일
WO1998024944A1 (de) * 1996-12-06 1998-06-11 THEVA DüNNSCHICHTTECHNIK GMBH Schichtmaterial sowie vorrichtung und verfahren zum herstellen von schichtmaterial
US5866204A (en) 1996-07-23 1999-02-02 The Governors Of The University Of Alberta Method of depositing shadow sculpted thin films
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
US6190513B1 (en) 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
US5961793A (en) * 1996-10-31 1999-10-05 Applied Materials, Inc. Method of reducing generation of particulate matter in a sputtering chamber
TW358964B (en) * 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6451179B1 (en) 1997-01-30 2002-09-17 Applied Materials, Inc. Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6599399B2 (en) * 1997-03-07 2003-07-29 Applied Materials, Inc. Sputtering method to generate ionized metal plasma using electron beams and magnetic field
US6103070A (en) * 1997-05-14 2000-08-15 Applied Materials, Inc. Powered shield source for high density plasma
US6210539B1 (en) 1997-05-14 2001-04-03 Applied Materials, Inc. Method and apparatus for producing a uniform density plasma above a substrate
US6652717B1 (en) 1997-05-16 2003-11-25 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6361661B2 (en) 1997-05-16 2002-03-26 Applies Materials, Inc. Hybrid coil design for ionized deposition
US6077402A (en) * 1997-05-16 2000-06-20 Applied Materials, Inc. Central coil design for ionized metal plasma deposition
US6579426B1 (en) 1997-05-16 2003-06-17 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
ATE225870T1 (de) * 1997-07-30 2002-10-15 Univ Alberta Aufdampfung von dünnen filmen bei schiefen einfall winkeln
US6375810B2 (en) 1997-08-07 2002-04-23 Applied Materials, Inc. Plasma vapor deposition with coil sputtering
US6235169B1 (en) 1997-08-07 2001-05-22 Applied Materials, Inc. Modulated power for ionized metal plasma deposition
US6345588B1 (en) 1997-08-07 2002-02-12 Applied Materials, Inc. Use of variable RF generator to control coil voltage distribution
US5902461A (en) * 1997-09-03 1999-05-11 Applied Materials, Inc. Apparatus and method for enhancing uniformity of a metal film formed on a substrate with the aid of an inductively coupled plasma
US6143141A (en) * 1997-09-12 2000-11-07 Southwest Research Institute Method of forming a diffusion barrier for overlay coatings
US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6042700A (en) * 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
US6023038A (en) * 1997-09-16 2000-02-08 Applied Materials, Inc. Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
US6280579B1 (en) 1997-12-19 2001-08-28 Applied Materials, Inc. Target misalignment detector
US6506287B1 (en) 1998-03-16 2003-01-14 Applied Materials, Inc. Overlap design of one-turn coil
US6254738B1 (en) 1998-03-31 2001-07-03 Applied Materials, Inc. Use of variable impedance having rotating core to control coil sputter distribution
TW434636B (en) 1998-07-13 2001-05-16 Applied Komatsu Technology Inc RF matching network with distributed outputs
US6231725B1 (en) 1998-08-04 2001-05-15 Applied Materials, Inc. Apparatus for sputtering material onto a workpiece with the aid of a plasma
US6238528B1 (en) 1998-10-13 2001-05-29 Applied Materials, Inc. Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
US6217718B1 (en) 1999-02-17 2001-04-17 Applied Materials, Inc. Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
US6409890B1 (en) 1999-07-27 2002-06-25 Applied Materials, Inc. Method and apparatus for forming a uniform layer on a workpiece during sputtering
US6921579B2 (en) * 2000-09-11 2005-07-26 Cardinal Cg Company Temporary protective covers
WO2006027016A1 (en) * 2004-09-08 2006-03-16 Bic-Violex Sa Method for deposition of a layer on a razor blade edge and razor blade
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
US7790604B2 (en) * 2007-08-20 2010-09-07 Applied Materials, Inc. Krypton sputtering of thin tungsten layer for integrated circuits
US8981226B2 (en) * 2007-10-24 2015-03-17 Sekisui Chemical Co., Ltd. Electrically conductive microparticle, anisotropic electrically conductive material, connection structure, and method for production of electrically conductive microparticle
DE102008023591A1 (de) * 2008-05-14 2009-11-19 Mtu Aero Engines Gmbh Schutzschicht und Verfahren zum Aufbringen einer Schutzschicht
USD709596S1 (en) 2014-02-21 2014-07-22 Access Business Group International Llc Auxiliary faucet
FR3025929B1 (fr) * 2014-09-17 2016-10-21 Commissariat Energie Atomique Gaines de combustible nucleaire, procedes de fabrication et utilisation contre l'oxydation.
WO2017100118A1 (en) 2015-12-11 2017-06-15 Cardinal Cg Company Method of coating both sides of a substrate
WO2018093985A1 (en) 2016-11-17 2018-05-24 Cardinal Cg Company Static-dissipative coating technology

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US3021271A (en) * 1959-04-27 1962-02-13 Gen Mills Inc Growth of solid layers on substrates which are kept under ion bombardment before and during deposition
US3736242A (en) * 1968-01-31 1973-05-29 Bell Telephone Labor Inc Sputtering technique
US3639151A (en) * 1969-03-13 1972-02-01 United Aircraft Corp Vapor randomization in vacuum deposition of coatings
US3628994A (en) * 1969-03-13 1971-12-21 United Aircraft Corp Method of coating a plurality of substrates by vapor deposition
GB1365492A (en) * 1971-02-05 1974-09-04 Triplex Safety Glass Co Metal oxide films
US4006268A (en) * 1975-03-17 1977-02-01 Airco, Inc. Vapor collimation in vacuum deposition of coatings
US3979273A (en) * 1975-05-27 1976-09-07 United Technologies Corporation Method of forming aluminide coatings on nickel-, cobalt-, and iron-base alloys
US4036723A (en) * 1975-08-21 1977-07-19 International Business Machines Corporation RF bias sputtering method for producing insulating films free of surface irregularities
US4038171A (en) * 1976-03-31 1977-07-26 Battelle Memorial Institute Supported plasma sputtering apparatus for high deposition rate over large area
US4150905A (en) * 1977-02-09 1979-04-24 Ultramet Spheres obtained by vapor deposition for use in ball point pens
US4124472A (en) * 1977-02-28 1978-11-07 Riegert Richard P Process for the protection of wear surfaces

Also Published As

Publication number Publication date
EP0048732A1 (en) 1982-04-07
JPH0317903B2 (OSRAM) 1991-03-11
GB2083505B (en) 1985-01-30
DE3140611T1 (de) 1982-07-29
WO1981002694A1 (en) 1981-10-01
DE3140611C2 (OSRAM) 1990-01-11
CA1156968A (en) 1983-11-15
US4468437A (en) 1984-08-28
GB2083505A (en) 1982-03-24
US4336118A (en) 1982-06-22

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