JPS5742523A - Preparation of amorphous silicon film - Google Patents

Preparation of amorphous silicon film

Info

Publication number
JPS5742523A
JPS5742523A JP55117479A JP11747980A JPS5742523A JP S5742523 A JPS5742523 A JP S5742523A JP 55117479 A JP55117479 A JP 55117479A JP 11747980 A JP11747980 A JP 11747980A JP S5742523 A JPS5742523 A JP S5742523A
Authority
JP
Japan
Prior art keywords
amorphous silicon
silicon film
gas
monosilane gas
direct electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55117479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6332863B2 (es
Inventor
Akio Azuma
Kazuhiro Kawajiri
Yuzo Mizobuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP55117479A priority Critical patent/JPS5742523A/ja
Publication of JPS5742523A publication Critical patent/JPS5742523A/ja
Publication of JPS6332863B2 publication Critical patent/JPS6332863B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
JP55117479A 1980-08-26 1980-08-26 Preparation of amorphous silicon film Granted JPS5742523A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55117479A JPS5742523A (en) 1980-08-26 1980-08-26 Preparation of amorphous silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55117479A JPS5742523A (en) 1980-08-26 1980-08-26 Preparation of amorphous silicon film

Publications (2)

Publication Number Publication Date
JPS5742523A true JPS5742523A (en) 1982-03-10
JPS6332863B2 JPS6332863B2 (es) 1988-07-01

Family

ID=14712711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55117479A Granted JPS5742523A (en) 1980-08-26 1980-08-26 Preparation of amorphous silicon film

Country Status (1)

Country Link
JP (1) JPS5742523A (es)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127647A (ja) * 1983-01-11 1984-07-23 Mitsui Toatsu Chem Inc 非晶質薄膜の製法
JPS59179151A (ja) * 1983-03-30 1984-10-11 Mitsui Toatsu Chem Inc 非晶質薄膜の製法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127647A (ja) * 1983-01-11 1984-07-23 Mitsui Toatsu Chem Inc 非晶質薄膜の製法
JPS59179151A (ja) * 1983-03-30 1984-10-11 Mitsui Toatsu Chem Inc 非晶質薄膜の製法

Also Published As

Publication number Publication date
JPS6332863B2 (es) 1988-07-01

Similar Documents

Publication Publication Date Title
JPS5777021A (en) Manufacture of amorphous silicon
JPS5767938A (en) Production of photoconductive member
AU560168B2 (en) Amorphous semiconductor alloys
JPS59179152A (ja) アモルファスシリコン半導体薄膜の製造方法
JPS5591968A (en) Film forming method by glow discharge
JPS5742523A (en) Preparation of amorphous silicon film
JP3144165B2 (ja) 薄膜生成装置
JPS6151629B2 (es)
JPS5633888A (en) Solar battery
JPS57187973A (en) Solar cell
JP2723548B2 (ja) 炭素含有シリコン微結晶薄膜の形成法
JPS5651878A (en) Manufacture of mis composition amorphous silicon solar cell
JP2515329B2 (ja) 薄膜形成方法
US20020039832A1 (en) Thin film formation method
JPS5916326A (ja) 薄膜の製造方法
JPS56140021A (en) Manufacture of silicon carbide thin film
JP2728874B2 (ja) 半導体装置の製法
JPS57153436A (en) Semiconductor device
JPS5727914A (en) Manufacture of thin silicon carbide film
JPS57202788A (en) Manufacture of amorphous photoelectric conversion element
JPS57187935A (en) Forming of fine crystalline amorphous silicon film
JPS5564350A (en) Radioactive-ray receiving face
JPS5685877A (en) Treatment of amorphous semiconductor film
SU616992A1 (ru) Способ получени защитных пленок
JPS5723216A (en) Manufacture of plasma reactor and semiconductor element