JPS5740846A - Ion injector - Google Patents
Ion injectorInfo
- Publication number
- JPS5740846A JPS5740846A JP11761180A JP11761180A JPS5740846A JP S5740846 A JPS5740846 A JP S5740846A JP 11761180 A JP11761180 A JP 11761180A JP 11761180 A JP11761180 A JP 11761180A JP S5740846 A JPS5740846 A JP S5740846A
- Authority
- JP
- Japan
- Prior art keywords
- time difference
- ion
- energy
- modulation
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Abstract
PURPOSE:To measure incidence energy easily and accurately by detecting the time difference between the output signal of a modulation means and that of a density detection means and the ion speed and energy depending upon the detected time difference. CONSTITUTION:A deflected ion beam passes through an ion density detection section 22 and is injected into a semiconductor substrate 17. The density detection section 22 detects the change of ion density immediately before the semiconductor substrate 17 and this detection signal is sent to a time difference measurement circuit 23. Besides, the modulation signal is sent from a modulation section 18 to the time difference measurement circuit 23 and the time difference between this detection signal and modulation signal is measured. As a result, by pre-establishing a relationship among time difference, acceleration speed, and ion energy, the ion energy can easily be calculated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11761180A JPS5740846A (en) | 1980-08-26 | 1980-08-26 | Ion injector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11761180A JPS5740846A (en) | 1980-08-26 | 1980-08-26 | Ion injector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5740846A true JPS5740846A (en) | 1982-03-06 |
Family
ID=14716039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11761180A Pending JPS5740846A (en) | 1980-08-26 | 1980-08-26 | Ion injector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5740846A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4761559A (en) * | 1986-09-24 | 1988-08-02 | Eaton Corporation | Ion beam implantation display method and apparatus |
US6137112A (en) * | 1998-09-10 | 2000-10-24 | Eaton Corporation | Time of flight energy measurement apparatus for an ion beam implanter |
-
1980
- 1980-08-26 JP JP11761180A patent/JPS5740846A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4761559A (en) * | 1986-09-24 | 1988-08-02 | Eaton Corporation | Ion beam implantation display method and apparatus |
US6137112A (en) * | 1998-09-10 | 2000-10-24 | Eaton Corporation | Time of flight energy measurement apparatus for an ion beam implanter |
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