JPS5740660A - Testing method for semiconductor device - Google Patents
Testing method for semiconductor deviceInfo
- Publication number
- JPS5740660A JPS5740660A JP55117388A JP11738880A JPS5740660A JP S5740660 A JPS5740660 A JP S5740660A JP 55117388 A JP55117388 A JP 55117388A JP 11738880 A JP11738880 A JP 11738880A JP S5740660 A JPS5740660 A JP S5740660A
- Authority
- JP
- Japan
- Prior art keywords
- current
- absorb
- driver
- ability
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
PURPOSE:To enable checking of all of desired tests at a stage when products are delivered from a manufacturer, by a method wherein it is previously tested whether or not a driver of a P-PROM has an ability to absorb a writing current. CONSTITUTION:A P-ROM has several output terminals and a terminal, wherethrough a writing current flows, is combined with the output terminal, which is utilized for testing an ability for a driver, selected by a decoder, to absorb a current by a method wherein a current, having no possibility of simultaneously writing a memory cell, is caused to flow from each output terminal to the memory cell connected to each output terminal selected by a decoder. Thus, it can be tested whether or not the driver has an ability to absorb a writing current without destroying the memory cell, and all of the desired tests can be checked at a stage when poducts are delivered from the manufacturer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55117388A JPS5740660A (en) | 1980-08-26 | 1980-08-26 | Testing method for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55117388A JPS5740660A (en) | 1980-08-26 | 1980-08-26 | Testing method for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5740660A true JPS5740660A (en) | 1982-03-06 |
Family
ID=14710407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55117388A Pending JPS5740660A (en) | 1980-08-26 | 1980-08-26 | Testing method for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5740660A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01111380A (en) * | 1987-10-23 | 1989-04-28 | Sumitomo Metal Ind Ltd | Photovoltaic device and its manufacture |
JP2002350209A (en) * | 2001-05-30 | 2002-12-04 | Matsushita Electric Ind Co Ltd | Gas protection device |
-
1980
- 1980-08-26 JP JP55117388A patent/JPS5740660A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01111380A (en) * | 1987-10-23 | 1989-04-28 | Sumitomo Metal Ind Ltd | Photovoltaic device and its manufacture |
JP2002350209A (en) * | 2001-05-30 | 2002-12-04 | Matsushita Electric Ind Co Ltd | Gas protection device |
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