JPS5737821A - Vapor phase reaction device - Google Patents
Vapor phase reaction deviceInfo
- Publication number
- JPS5737821A JPS5737821A JP11344380A JP11344380A JPS5737821A JP S5737821 A JPS5737821 A JP S5737821A JP 11344380 A JP11344380 A JP 11344380A JP 11344380 A JP11344380 A JP 11344380A JP S5737821 A JPS5737821 A JP S5737821A
- Authority
- JP
- Japan
- Prior art keywords
- spouting
- film
- quality
- gas
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11344380A JPS5946088B2 (ja) | 1980-08-20 | 1980-08-20 | 気相反応装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11344380A JPS5946088B2 (ja) | 1980-08-20 | 1980-08-20 | 気相反応装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5737821A true JPS5737821A (en) | 1982-03-02 |
JPS5946088B2 JPS5946088B2 (ja) | 1984-11-10 |
Family
ID=14612348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11344380A Expired JPS5946088B2 (ja) | 1980-08-20 | 1980-08-20 | 気相反応装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5946088B2 (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61116826A (ja) * | 1984-11-12 | 1986-06-04 | Kanegafuchi Chem Ind Co Ltd | 薄膜形成方法 |
US4616597A (en) * | 1984-10-31 | 1986-10-14 | Rca Corporation | Apparatus for making a plasma coating |
JPS62172716A (ja) * | 1986-01-27 | 1987-07-29 | Canon Inc | 堆積膜形成装置 |
US5415819A (en) * | 1991-10-07 | 1995-05-16 | Ford Motor Company | Low pressure plasma treatment method |
US5500256A (en) * | 1994-08-16 | 1996-03-19 | Fujitsu Limited | Dry process apparatus using plural kinds of gas |
US5660639A (en) * | 1995-10-17 | 1997-08-26 | Ford Motor Company | Method and apparatus for plasma treating an article |
US6565661B1 (en) * | 1999-06-04 | 2003-05-20 | Simplus Systems Corporation | High flow conductance and high thermal conductance showerhead system and method |
KR20030078203A (ko) * | 2002-03-28 | 2003-10-08 | (주)한백 | 유기금속화학증착장치용 반응기의 가스분사장치 |
WO2005041285A1 (ja) * | 2003-10-23 | 2005-05-06 | Tokyo Electron Limited | シャワーヘッド及びこれを用いた成膜装置 |
KR100646017B1 (ko) * | 2006-01-19 | 2006-11-15 | 주식회사 아토 | 가스 분리형의 다수의 공동 전극을 이용한 샤워헤드 |
US7306829B2 (en) * | 2000-04-26 | 2007-12-11 | Unaxis Balzers Aktiengesellschaft | RF plasma reactor having a distribution chamber with at least one grid |
US20120045902A1 (en) * | 2007-03-30 | 2012-02-23 | Lam Research Corporation | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
-
1980
- 1980-08-20 JP JP11344380A patent/JPS5946088B2/ja not_active Expired
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4616597A (en) * | 1984-10-31 | 1986-10-14 | Rca Corporation | Apparatus for making a plasma coating |
JPS61116826A (ja) * | 1984-11-12 | 1986-06-04 | Kanegafuchi Chem Ind Co Ltd | 薄膜形成方法 |
JPH0544820B2 (ja) * | 1984-11-12 | 1993-07-07 | Kanegafuchi Chemical Ind | |
JPS62172716A (ja) * | 1986-01-27 | 1987-07-29 | Canon Inc | 堆積膜形成装置 |
US5415819A (en) * | 1991-10-07 | 1995-05-16 | Ford Motor Company | Low pressure plasma treatment method |
US5560963A (en) * | 1991-10-07 | 1996-10-01 | Ford Motor Company | Low pressure plasma treatment of an article surface |
US5500256A (en) * | 1994-08-16 | 1996-03-19 | Fujitsu Limited | Dry process apparatus using plural kinds of gas |
US5660639A (en) * | 1995-10-17 | 1997-08-26 | Ford Motor Company | Method and apparatus for plasma treating an article |
US6565661B1 (en) * | 1999-06-04 | 2003-05-20 | Simplus Systems Corporation | High flow conductance and high thermal conductance showerhead system and method |
US7306829B2 (en) * | 2000-04-26 | 2007-12-11 | Unaxis Balzers Aktiengesellschaft | RF plasma reactor having a distribution chamber with at least one grid |
US9045828B2 (en) | 2000-04-26 | 2015-06-02 | Tel Solar Ag | RF plasma reactor having a distribution chamber with at least one grid |
KR20030078203A (ko) * | 2002-03-28 | 2003-10-08 | (주)한백 | 유기금속화학증착장치용 반응기의 가스분사장치 |
WO2005041285A1 (ja) * | 2003-10-23 | 2005-05-06 | Tokyo Electron Limited | シャワーヘッド及びこれを用いた成膜装置 |
US7931749B2 (en) | 2003-10-23 | 2011-04-26 | Tokyo Electron Limited | Shower head and film-forming device using the same |
KR100646017B1 (ko) * | 2006-01-19 | 2006-11-15 | 주식회사 아토 | 가스 분리형의 다수의 공동 전극을 이용한 샤워헤드 |
US20120045902A1 (en) * | 2007-03-30 | 2012-02-23 | Lam Research Corporation | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
US8443756B2 (en) * | 2007-03-30 | 2013-05-21 | Lam Research Corporation | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
Also Published As
Publication number | Publication date |
---|---|
JPS5946088B2 (ja) | 1984-11-10 |
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