JPS5736885A - Sutoraipugatadaburuheterosetsugoreezasoshi - Google Patents
SutoraipugatadaburuheterosetsugoreezasoshiInfo
- Publication number
- JPS5736885A JPS5736885A JP11126980A JP11126980A JPS5736885A JP S5736885 A JPS5736885 A JP S5736885A JP 11126980 A JP11126980 A JP 11126980A JP 11126980 A JP11126980 A JP 11126980A JP S5736885 A JPS5736885 A JP S5736885A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- laser element
- striped
- type double
- stripe type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000005842 heteroatom Chemical group 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000003776 cleavage reaction Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000835 fiber Substances 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 230000007017 scission Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11126980A JPS5736885A (ja) | 1980-08-13 | 1980-08-13 | Sutoraipugatadaburuheterosetsugoreezasoshi |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11126980A JPS5736885A (ja) | 1980-08-13 | 1980-08-13 | Sutoraipugatadaburuheterosetsugoreezasoshi |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5736885A true JPS5736885A (ja) | 1982-02-27 |
| JPS6342869B2 JPS6342869B2 (enrdf_load_stackoverflow) | 1988-08-25 |
Family
ID=14556921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11126980A Granted JPS5736885A (ja) | 1980-08-13 | 1980-08-13 | Sutoraipugatadaburuheterosetsugoreezasoshi |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5736885A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06177473A (ja) * | 1992-08-11 | 1994-06-24 | Nec Corp | 半導体光制御デバイス |
-
1980
- 1980-08-13 JP JP11126980A patent/JPS5736885A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| APPLIED PHYSICS LETTERS=1979 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06177473A (ja) * | 1992-08-11 | 1994-06-24 | Nec Corp | 半導体光制御デバイス |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6342869B2 (enrdf_load_stackoverflow) | 1988-08-25 |
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