JPS5731169A - Semiconductor ic device - Google Patents

Semiconductor ic device

Info

Publication number
JPS5731169A
JPS5731169A JP10596480A JP10596480A JPS5731169A JP S5731169 A JPS5731169 A JP S5731169A JP 10596480 A JP10596480 A JP 10596480A JP 10596480 A JP10596480 A JP 10596480A JP S5731169 A JPS5731169 A JP S5731169A
Authority
JP
Japan
Prior art keywords
region
type
injector
wiring
belt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10596480A
Other languages
Japanese (ja)
Inventor
Kenji Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP10596480A priority Critical patent/JPS5731169A/en
Publication of JPS5731169A publication Critical patent/JPS5731169A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]

Abstract

PURPOSE:To avoid the crossing of wiring layers and to shorten the length of the wiring layer, by a method wherein a P type injector region is composed in belt-shape on the central part between a plurality of P type signal application regions which are composed in an N type semiconductor layer and a certain method by which the electric potential of the said belt-shape injector is kept uniform almost all over its whole region is provided. CONSTITUTION:A belt-shape P type injector region 2 is composed in an N type epitaxial layer 1. A P<+> region 20 is piled along nearly a total length of the region 2 and the electric potential of the region 2 is clamped at the circuit source potential VDD almost all over the region 2. By above configuration, outside wiring layers for determining the potential of the injector 2 are not necessary at all at the central part and wiring length between P type signal application regions 3a, 3b,... and 4a, 4b,... which are positioned correspondingly on both sides of the region 2 can be minimized. Thus resistance of wiring and stray capacity are reduced.
JP10596480A 1980-08-01 1980-08-01 Semiconductor ic device Pending JPS5731169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10596480A JPS5731169A (en) 1980-08-01 1980-08-01 Semiconductor ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10596480A JPS5731169A (en) 1980-08-01 1980-08-01 Semiconductor ic device

Publications (1)

Publication Number Publication Date
JPS5731169A true JPS5731169A (en) 1982-02-19

Family

ID=14421468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10596480A Pending JPS5731169A (en) 1980-08-01 1980-08-01 Semiconductor ic device

Country Status (1)

Country Link
JP (1) JPS5731169A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247383A (en) * 1975-10-13 1977-04-15 Toshiba Corp Semiconductor device
JPS52152181A (en) * 1976-06-14 1977-12-17 Hitachi Ltd Semiconductor integrated circuit device and its production
JPS5367338A (en) * 1976-11-27 1978-06-15 Mitsubishi Electric Corp Semiconductor logical circuit device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247383A (en) * 1975-10-13 1977-04-15 Toshiba Corp Semiconductor device
JPS52152181A (en) * 1976-06-14 1977-12-17 Hitachi Ltd Semiconductor integrated circuit device and its production
JPS5367338A (en) * 1976-11-27 1978-06-15 Mitsubishi Electric Corp Semiconductor logical circuit device

Similar Documents

Publication Publication Date Title
JPS5731166A (en) Semiconductor device
DE3678023D1 (en) Integrated circuit arrangement with stacked conductor layers for connecting circuit elements.
DE3851553T2 (en) Material for electrical carriers and multi-layer circuit containing this material and integrated circuit chip carrier.
KR870005450A (en) Semiconductor device without electrical short circuit through semiconductor layer and method for manufacturing the same
DE3468151D1 (en) Gate array type semiconductor integrated circuit device
KR910017711A (en) Energized coil device, its manufacturing method and electromagnetic micromotor with built-in copper device
ATE54776T1 (en) SEMICONDUCTOR ELEMENT AND MANUFACTURING PROCESS.
JPS56162875A (en) Semiconductor device
EP0307973A3 (en) An isfet chip suitable to be used in an apparatus comprising a measuring circuit for selectively measuring ions in a liquid
EP0042175A3 (en) Semiconductor device having a semiconductor layer formed on an insulating substrate and method for making the same
DE68923742D1 (en) Semiconductor device with an area for memory cells and with peripheral circuit and manufacturing method therefor.
JPS5731169A (en) Semiconductor ic device
JPS55163877A (en) Semiconductor integrated circuit device
IE811262L (en) Semiconductor integrated circuit devices
JPS6412565A (en) Semiconductor integrated circuit
JPS57162360A (en) Complementary insulated gate field effect semiconductor device
UST101804I4 (en) Integrated circuit layout utilizing separated active circuit and wiring regions
JPS5336184A (en) Semiconductor integrated circuit
JPS57164557A (en) Integrated circuit device
JPS57186350A (en) Semiconductor integrated circuit device
JPS56162482A (en) Method of carrying dual in-line package type semiconductor integrated circuit at testing time
KR940008023A (en) Structures for reducing electrical noise of integrated circuit devices and methods of reducing them
JPS55148449A (en) Semiconductor device
JPS5768070A (en) Charge transfer device
JPS56126969A (en) Integrated circuit device