JPS6412565A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS6412565A JPS6412565A JP16923287A JP16923287A JPS6412565A JP S6412565 A JPS6412565 A JP S6412565A JP 16923287 A JP16923287 A JP 16923287A JP 16923287 A JP16923287 A JP 16923287A JP S6412565 A JPS6412565 A JP S6412565A
- Authority
- JP
- Japan
- Prior art keywords
- section
- bonding pad
- electrostatic
- circuit
- fuse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To enable a defect analysis of the cause of breakdown or the like of an inner circuit by a method wherein an electrostatic impression recording section containing a fuse section is provided adjacently to a bonding pad and one side of a circuit record, and charge, which is induced when electrostatic is applied onto the bonding pad, is made to flow toward the face section. CONSTITUTION:A circuit wiring 2 of which one end is connected with an inner circuit and a bonding pad 3 which is connected with the other end of the wiring 2 and also bonded with a corresponding lead terminal are provided on a semiconductor chip 1 of a semiconductor integrated circuit. And, a reception end section 41 of conductor material such as Al or the like and a fuse section 42 of conductive material, of which one end is connected with the reception end 41, are provided closely to the bonding pad 3 on the chip 1. A terminal end section 43 is connected with the fuse section 42, where an electrostatic impression recording section is composed of three sections. Then, charge, which is induced when electrostatic is applied onto the bonding pad section 3, is made to flow through the fuse section 42, so that a defect analysis of the inner circuit is performed through fusion of the fuse section 42.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16923287A JPS6412565A (en) | 1987-07-06 | 1987-07-06 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16923287A JPS6412565A (en) | 1987-07-06 | 1987-07-06 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6412565A true JPS6412565A (en) | 1989-01-17 |
Family
ID=15882681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16923287A Pending JPS6412565A (en) | 1987-07-06 | 1987-07-06 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6412565A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007114127A (en) * | 2005-10-21 | 2007-05-10 | Fujitsu Ltd | Charging amount evaluation element |
JP2007232615A (en) * | 2006-03-02 | 2007-09-13 | Fujitsu Ltd | Overcurrent detecting element |
JP2010212523A (en) * | 2009-03-11 | 2010-09-24 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method of the same, and optical semiconductor device |
JP2011254562A (en) * | 2010-05-07 | 2011-12-15 | Panasonic Corp | Motor current detection ic, and current detector and motor controller using the same |
JP2018152391A (en) * | 2017-03-10 | 2018-09-27 | 日立オートモティブシステムズ株式会社 | Semiconductor device |
JP2020047934A (en) * | 2016-09-27 | 2020-03-26 | アナログ・ディヴァイシス・グローバル・アンリミテッド・カンパニー | Electrical overstress detection device |
US11668734B2 (en) | 2018-03-26 | 2023-06-06 | Analog Devices International Unlimited Company | Spark gap structures for detection and protection against electrical overstress events |
-
1987
- 1987-07-06 JP JP16923287A patent/JPS6412565A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007114127A (en) * | 2005-10-21 | 2007-05-10 | Fujitsu Ltd | Charging amount evaluation element |
JP2007232615A (en) * | 2006-03-02 | 2007-09-13 | Fujitsu Ltd | Overcurrent detecting element |
JP2010212523A (en) * | 2009-03-11 | 2010-09-24 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method of the same, and optical semiconductor device |
JP2011254562A (en) * | 2010-05-07 | 2011-12-15 | Panasonic Corp | Motor current detection ic, and current detector and motor controller using the same |
JP2020047934A (en) * | 2016-09-27 | 2020-03-26 | アナログ・ディヴァイシス・グローバル・アンリミテッド・カンパニー | Electrical overstress detection device |
JP2022000900A (en) * | 2016-09-27 | 2022-01-04 | アナログ・ディヴァイシス・インターナショナル・アンリミテッド・カンパニー | Electrical overstress detection device |
US11372030B2 (en) | 2016-09-27 | 2022-06-28 | Analog Devices International Unlimited Company | Electrical overstress detection device |
JP2018152391A (en) * | 2017-03-10 | 2018-09-27 | 日立オートモティブシステムズ株式会社 | Semiconductor device |
US11668734B2 (en) | 2018-03-26 | 2023-06-06 | Analog Devices International Unlimited Company | Spark gap structures for detection and protection against electrical overstress events |
US12055569B2 (en) | 2018-03-26 | 2024-08-06 | Analog Devices International Unlimited Company | Spark gap structures for detection and protection against electrical overstress events |
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