JPS6412565A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6412565A
JPS6412565A JP16923287A JP16923287A JPS6412565A JP S6412565 A JPS6412565 A JP S6412565A JP 16923287 A JP16923287 A JP 16923287A JP 16923287 A JP16923287 A JP 16923287A JP S6412565 A JPS6412565 A JP S6412565A
Authority
JP
Japan
Prior art keywords
section
bonding pad
electrostatic
circuit
fuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16923287A
Other languages
Japanese (ja)
Inventor
Tamio Tomosugi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16923287A priority Critical patent/JPS6412565A/en
Publication of JPS6412565A publication Critical patent/JPS6412565A/en
Pending legal-status Critical Current

Links

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enable a defect analysis of the cause of breakdown or the like of an inner circuit by a method wherein an electrostatic impression recording section containing a fuse section is provided adjacently to a bonding pad and one side of a circuit record, and charge, which is induced when electrostatic is applied onto the bonding pad, is made to flow toward the face section. CONSTITUTION:A circuit wiring 2 of which one end is connected with an inner circuit and a bonding pad 3 which is connected with the other end of the wiring 2 and also bonded with a corresponding lead terminal are provided on a semiconductor chip 1 of a semiconductor integrated circuit. And, a reception end section 41 of conductor material such as Al or the like and a fuse section 42 of conductive material, of which one end is connected with the reception end 41, are provided closely to the bonding pad 3 on the chip 1. A terminal end section 43 is connected with the fuse section 42, where an electrostatic impression recording section is composed of three sections. Then, charge, which is induced when electrostatic is applied onto the bonding pad section 3, is made to flow through the fuse section 42, so that a defect analysis of the inner circuit is performed through fusion of the fuse section 42.
JP16923287A 1987-07-06 1987-07-06 Semiconductor integrated circuit Pending JPS6412565A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16923287A JPS6412565A (en) 1987-07-06 1987-07-06 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16923287A JPS6412565A (en) 1987-07-06 1987-07-06 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS6412565A true JPS6412565A (en) 1989-01-17

Family

ID=15882681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16923287A Pending JPS6412565A (en) 1987-07-06 1987-07-06 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6412565A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007114127A (en) * 2005-10-21 2007-05-10 Fujitsu Ltd Charging amount evaluation element
JP2007232615A (en) * 2006-03-02 2007-09-13 Fujitsu Ltd Overcurrent detecting element
JP2010212523A (en) * 2009-03-11 2010-09-24 Mitsubishi Electric Corp Semiconductor device and manufacturing method of the same, and optical semiconductor device
JP2011254562A (en) * 2010-05-07 2011-12-15 Panasonic Corp Motor current detection ic, and current detector and motor controller using the same
JP2018152391A (en) * 2017-03-10 2018-09-27 日立オートモティブシステムズ株式会社 Semiconductor device
JP2020047934A (en) * 2016-09-27 2020-03-26 アナログ・ディヴァイシス・グローバル・アンリミテッド・カンパニー Electrical overstress detection device
US11668734B2 (en) 2018-03-26 2023-06-06 Analog Devices International Unlimited Company Spark gap structures for detection and protection against electrical overstress events

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007114127A (en) * 2005-10-21 2007-05-10 Fujitsu Ltd Charging amount evaluation element
JP2007232615A (en) * 2006-03-02 2007-09-13 Fujitsu Ltd Overcurrent detecting element
JP2010212523A (en) * 2009-03-11 2010-09-24 Mitsubishi Electric Corp Semiconductor device and manufacturing method of the same, and optical semiconductor device
JP2011254562A (en) * 2010-05-07 2011-12-15 Panasonic Corp Motor current detection ic, and current detector and motor controller using the same
JP2020047934A (en) * 2016-09-27 2020-03-26 アナログ・ディヴァイシス・グローバル・アンリミテッド・カンパニー Electrical overstress detection device
JP2022000900A (en) * 2016-09-27 2022-01-04 アナログ・ディヴァイシス・インターナショナル・アンリミテッド・カンパニー Electrical overstress detection device
US11372030B2 (en) 2016-09-27 2022-06-28 Analog Devices International Unlimited Company Electrical overstress detection device
JP2018152391A (en) * 2017-03-10 2018-09-27 日立オートモティブシステムズ株式会社 Semiconductor device
US11668734B2 (en) 2018-03-26 2023-06-06 Analog Devices International Unlimited Company Spark gap structures for detection and protection against electrical overstress events
US12055569B2 (en) 2018-03-26 2024-08-06 Analog Devices International Unlimited Company Spark gap structures for detection and protection against electrical overstress events

Similar Documents

Publication Publication Date Title
JPS5731166A (en) Semiconductor device
JPS6428930A (en) Semiconductor device
EP0473796A4 (en) Semiconductor device having a plurality of chips
EP0393206A4 (en) Image sensor and method of producing the same
EP0890989A4 (en) Semiconductor device and method for manufacturing thereof
EP0304263A3 (en) Semiconductor chip assembly
MY123034A (en) Semiconductor device and method of fabricating the same
KR920020686A (en) Semiconductor package
EP0346061A3 (en) Integrated circuit device having an improved package structure
DE59904237D1 (en) BIOMETRIC SENSOR AND METHOD FOR THE PRODUCTION THEREOF
ATE39395T1 (en) BRIDGE ELEMENT.
JPS6412565A (en) Semiconductor integrated circuit
JPS57199228A (en) Wire bonding pad device
JPS6459947A (en) Semiconductor device
JPS57104235A (en) Semiconductor device
JPS57187955A (en) Sealing structure of semiconductor element
JPS6427236A (en) Wire bonding method
JPS5734351A (en) Semiconductor device
EP0867938A3 (en) Semiconductor device comprising electrode pads and leads
JPS5598837A (en) Semiconductor device
KR970063590A (en) Chip scale package with tap tape
JPS5778146A (en) Integrated circuit device
JPS5740945A (en) Integrated circuit device
JPS6412560A (en) Semiconductor device
JPS6421945A (en) Electronic element mounting module