JPS5728381A - Lasre device and its manufacture - Google Patents

Lasre device and its manufacture

Info

Publication number
JPS5728381A
JPS5728381A JP10311480A JP10311480A JPS5728381A JP S5728381 A JPS5728381 A JP S5728381A JP 10311480 A JP10311480 A JP 10311480A JP 10311480 A JP10311480 A JP 10311480A JP S5728381 A JPS5728381 A JP S5728381A
Authority
JP
Japan
Prior art keywords
lasre
substance
refractive index
low refractive
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10311480A
Other languages
Japanese (ja)
Inventor
Hirotaka Nakano
Hiroshi Washida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10311480A priority Critical patent/JPS5728381A/en
Publication of JPS5728381A publication Critical patent/JPS5728381A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
    • H01S3/0346—Protection of windows or mirrors against deleterious effects

Abstract

PURPOSE:To obtain the device having long life by constituting the lasre device by an SiO2 film in which the concentration of impurities in a substance with a low refractive index is made 50ppm or lower when dielectric multilayer films consisting of a substance with a high refractive index and the substance with the low refractive index are coated alternately on a substrate and the lasre device with two kinds of lasre mirrors having different characteristics is manufactured. CONSTITUTION:The lasre device is produced in such a manner that the mirror 34 at the high reflection side, the inside thereof has the multilayer film 36, is mounted at one end of a lasre tube 31 into which a mixed gas 32 of He and Ne is enclosed, and the mirror 35 at the output side, the inside thereof has the multilayer film 37 similarly, is attached at the other end. The lasre tube is constituted in this manner, light oscillated in the gas 32 is reflected by the multilayer film 36 approximately complete, the reflected light is reflected by the multilayer film 37 again, the reflection is repeated, and one part of light is passed through an antireflection film 38, and extracted to the outside. In this constitution, the both multilayer films 36 and 37 are prepared by the alternately laminated films of the substances with the high and low refractive indices, particularly, the substance with the low refractive index is formed by the SiO2 film, the concentration of impurities therein is 50ppm or lower.
JP10311480A 1980-07-29 1980-07-29 Lasre device and its manufacture Pending JPS5728381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10311480A JPS5728381A (en) 1980-07-29 1980-07-29 Lasre device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10311480A JPS5728381A (en) 1980-07-29 1980-07-29 Lasre device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5728381A true JPS5728381A (en) 1982-02-16

Family

ID=14345566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10311480A Pending JPS5728381A (en) 1980-07-29 1980-07-29 Lasre device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5728381A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6158846A (en) * 1984-08-31 1986-03-26 株式会社竹中工務店 Method of foaming molten slag
US7355413B2 (en) 2005-01-31 2008-04-08 Ricoh Company, Ltd. Testing method/arrangement measuring electromagnetic interference of noise in a to-be-tested printed circuit board

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6158846A (en) * 1984-08-31 1986-03-26 株式会社竹中工務店 Method of foaming molten slag
JPH0529619B2 (en) * 1984-08-31 1993-05-06 Takenaka Komuten Co
US7355413B2 (en) 2005-01-31 2008-04-08 Ricoh Company, Ltd. Testing method/arrangement measuring electromagnetic interference of noise in a to-be-tested printed circuit board

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