JPS5656689A - Semiconductor raman laser - Google Patents

Semiconductor raman laser

Info

Publication number
JPS5656689A
JPS5656689A JP13327079A JP13327079A JPS5656689A JP S5656689 A JPS5656689 A JP S5656689A JP 13327079 A JP13327079 A JP 13327079A JP 13327079 A JP13327079 A JP 13327079A JP S5656689 A JPS5656689 A JP S5656689A
Authority
JP
Japan
Prior art keywords
crystal
mirror
laser
light
projected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13327079A
Other languages
Japanese (ja)
Other versions
JPS6342436B2 (en
Inventor
Junichi Nishizawa
Ken Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP13327079A priority Critical patent/JPS5656689A/en
Publication of JPS5656689A publication Critical patent/JPS5656689A/en
Publication of JPS6342436B2 publication Critical patent/JPS6342436B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B62—LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
    • B62D—MOTOR VEHICLES; TRAILERS
    • B62D55/00—Endless track vehicles
    • B62D55/08—Endless track units; Parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B62—LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
    • B62D—MOTOR VEHICLES; TRAILERS
    • B62D55/00—Endless track vehicles
    • B62D55/08—Endless track units; Parts thereof
    • B62D55/12—Arrangement, location, or adaptation of driving sprockets
    • B62D55/125—Final drives

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Transportation (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a practical and small-sized photoexcited Raman laser by forming the Raman laser of the semiconductor crystal of a compound belonging to III-V families and of an YAG laser. CONSTITUTION:A GaP crystal 1 whose end-face orientation in the axial direction is the direction of <110> is cut out in the form of an angular rod and both end faces are made to be an optical float surface and coated with a nonreflecting coating layer. Next, on both of these surfaces, dielectric mirrors M1 and M2 whose reflection ratio is set about 99.3% are arranged, and on the side of the mirror M1, a YAG pulse laser 2 is arranged so that the light 4 therefrom incides to the end surface of the crystal 1 with the incidence thetain of 5 deg.-6 deg.. In this way, Raman scattering effect is produced in the crystal 1, near-infrared rays 3 are projected from the side of the mirror M2, while at the mirror M1, the light reflected by the mirror M2 is further reflected as the light 4, and from the end surface of the crystal 1 on the side of mirror M2 the light 5 is projected. In this constitution, the energy of the restricted band of the laser 2 is selected to be 0.5-1.0 of the energy of the crystal 1, while the photonenergy is selected so as for its absorption coefficient to the crystal 1 to be 1cm<-1> or less.
JP13327079A 1979-10-15 1979-10-15 Semiconductor raman laser Granted JPS5656689A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13327079A JPS5656689A (en) 1979-10-15 1979-10-15 Semiconductor raman laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13327079A JPS5656689A (en) 1979-10-15 1979-10-15 Semiconductor raman laser

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP15713587A Division JPS6387782A (en) 1987-06-24 1987-06-24 Semiconductor raman laser

Publications (2)

Publication Number Publication Date
JPS5656689A true JPS5656689A (en) 1981-05-18
JPS6342436B2 JPS6342436B2 (en) 1988-08-23

Family

ID=15100688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13327079A Granted JPS5656689A (en) 1979-10-15 1979-10-15 Semiconductor raman laser

Country Status (1)

Country Link
JP (1) JPS5656689A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10270743A (en) * 1997-03-27 1998-10-09 Shinichiro Uekusa Photodetector and raman shifter element
EP1384294A2 (en) * 2001-03-30 2004-01-28 Coherent Technologies Inc. Noncollinearly pumped solid state raman laser

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495292A (en) * 1972-04-28 1974-01-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495292A (en) * 1972-04-28 1974-01-17

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10270743A (en) * 1997-03-27 1998-10-09 Shinichiro Uekusa Photodetector and raman shifter element
EP1384294A2 (en) * 2001-03-30 2004-01-28 Coherent Technologies Inc. Noncollinearly pumped solid state raman laser
EP1384294A4 (en) * 2001-03-30 2004-09-08 Coherent Tech Inc Noncollinearly pumped solid state raman laser

Also Published As

Publication number Publication date
JPS6342436B2 (en) 1988-08-23

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