JPS5726491A - Compound semiconductor light source - Google Patents

Compound semiconductor light source

Info

Publication number
JPS5726491A
JPS5726491A JP10084880A JP10084880A JPS5726491A JP S5726491 A JPS5726491 A JP S5726491A JP 10084880 A JP10084880 A JP 10084880A JP 10084880 A JP10084880 A JP 10084880A JP S5726491 A JPS5726491 A JP S5726491A
Authority
JP
Japan
Prior art keywords
light emitting
substrate
wavelength
laminated
high density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10084880A
Other languages
Japanese (ja)
Inventor
Akira Mita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10084880A priority Critical patent/JPS5726491A/en
Publication of JPS5726491A publication Critical patent/JPS5726491A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser

Abstract

PURPOSE:To obtain visible light or near infrared ray wavelength by forming 4- component mixed crystal light emitting region made of specific II-VI group compounds and an upper clad layer on a high density P type ZnTe single crystalline substrate. CONSTITUTION:A light emitting region 12 having the same lattice constant and crystalline orientation as the substrate 11 of the composition of Zn1-xCdxSeyTe1-y is formed on a high density P type ZeTe single crystalline plate 11. Then an upper clad layer 13 having the same lattice constant and crystalline orientation as the substrate 11 with the composition of Zn1-x'Cdx'Xdy'Te1-y' (0<x'<x, 0<y'<y) is laminated thereon. A striped strucure and resonant structure are added to the laminated, upper and lower electrodes 14 are attached, and when the structures are energized, coherent light having light emitting wavelengths externally of visible wavelength or near infrared wavelength can be obtained.
JP10084880A 1980-07-23 1980-07-23 Compound semiconductor light source Pending JPS5726491A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10084880A JPS5726491A (en) 1980-07-23 1980-07-23 Compound semiconductor light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10084880A JPS5726491A (en) 1980-07-23 1980-07-23 Compound semiconductor light source

Publications (1)

Publication Number Publication Date
JPS5726491A true JPS5726491A (en) 1982-02-12

Family

ID=14284734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10084880A Pending JPS5726491A (en) 1980-07-23 1980-07-23 Compound semiconductor light source

Country Status (1)

Country Link
JP (1) JPS5726491A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5045897A (en) * 1990-03-14 1991-09-03 Santa Barbara Research Center Quaternary II-VI materials for photonics

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5045897A (en) * 1990-03-14 1991-09-03 Santa Barbara Research Center Quaternary II-VI materials for photonics

Similar Documents

Publication Publication Date Title
JPS6435970A (en) Light emitting diode made of iii/v compound semiconductor material
JPS5726491A (en) Compound semiconductor light source
JPS5493380A (en) Semiconductor light emitting device
JPS5380988A (en) Light emitting diode
JPS57128092A (en) Imbedded type semiconductor laser device
JPS5771191A (en) Photosemiconductor element
ES476750A1 (en) Infra red light emissive devices.
JPS5518094A (en) Semiconductor laser device with high optical output and horizontal fundamental mode
JPS5380989A (en) Light emitting diode
EP0232586A3 (en) Cathode ray tube with single crystal targets
JPS54155789A (en) Structure of thin-film el element
JPS5785280A (en) Visible oscillation semiconductor laser
JPS6484590A (en) Thin film el element
JPS562384A (en) Composition emitting yellow light and fluorescent display tube excited with low-speed electron beam
JPS6428971A (en) Gaalas infrared light emitting diode
JPS5783072A (en) Light emitting diode
JPS5595318A (en) Production of amorphous film
JPS559440A (en) Semiconductor light emitting device
JPS5779683A (en) Narrow spectrum type light emitting diode
JPS5466788A (en) Photo coupler
JPS5263088A (en) Production of gaas light emitting diode
JPS55125692A (en) Semiconductor laser
JPS6427194A (en) Thin film el element
JPS5496996A (en) Display unit
JPS5474686A (en) Visible semiconductor laser and its manufacture