JPS5726445A - Laser annealing device - Google Patents

Laser annealing device

Info

Publication number
JPS5726445A
JPS5726445A JP10148580A JP10148580A JPS5726445A JP S5726445 A JPS5726445 A JP S5726445A JP 10148580 A JP10148580 A JP 10148580A JP 10148580 A JP10148580 A JP 10148580A JP S5726445 A JPS5726445 A JP S5726445A
Authority
JP
Japan
Prior art keywords
light
specimen
annealed
photolithography
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10148580A
Other languages
Japanese (ja)
Inventor
Hidekazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10148580A priority Critical patent/JPS5726445A/en
Publication of JPS5726445A publication Critical patent/JPS5726445A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Abstract

PURPOSE:To simplify the steps of manufacturing an electronic device by emitting a laser light via an optical mask and contracting and projecting a transparent pattern at the prescribed ratio, thereby eliminating a photolithography. CONSTITUTION:Single lateral mode Q switch pulse light of an Nd:YAG laser is condensed via a lens 2, and is emitted from the end via an optical fiber 3. The light is condensed via lens systems 4a-4c, the transparent pattern of an optical mask 6 is contracted to emit the light to a specimen 7, and the specimen 7 is annealed. A base 8 is synchronized with the Q switch of a laser oscillator 1, and the specimen is annealed by pulse while stepwisely feeding the base via a drive unit 9. According to this configuration, local heat treatment and chemical reaction treatment can be performed in two dimensions without photolithography.
JP10148580A 1980-07-24 1980-07-24 Laser annealing device Pending JPS5726445A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10148580A JPS5726445A (en) 1980-07-24 1980-07-24 Laser annealing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10148580A JPS5726445A (en) 1980-07-24 1980-07-24 Laser annealing device

Publications (1)

Publication Number Publication Date
JPS5726445A true JPS5726445A (en) 1982-02-12

Family

ID=14302004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10148580A Pending JPS5726445A (en) 1980-07-24 1980-07-24 Laser annealing device

Country Status (1)

Country Link
JP (1) JPS5726445A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01259530A (en) * 1988-04-11 1989-10-17 Tokyo Electron Ltd Processing apparatus
JP2001053021A (en) * 1999-08-16 2001-02-23 Nec Corp Semiconductor thin film manufacturing equipment

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372575A (en) * 1976-12-10 1978-06-28 Thomson Csf Pattern transfer optical device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372575A (en) * 1976-12-10 1978-06-28 Thomson Csf Pattern transfer optical device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01259530A (en) * 1988-04-11 1989-10-17 Tokyo Electron Ltd Processing apparatus
JP2001053021A (en) * 1999-08-16 2001-02-23 Nec Corp Semiconductor thin film manufacturing equipment
US6680460B1 (en) 1999-08-16 2004-01-20 Nec Corporation Apparatus for producing a semiconductor thin film

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