JPS57211772A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57211772A
JPS57211772A JP56097201A JP9720181A JPS57211772A JP S57211772 A JPS57211772 A JP S57211772A JP 56097201 A JP56097201 A JP 56097201A JP 9720181 A JP9720181 A JP 9720181A JP S57211772 A JPS57211772 A JP S57211772A
Authority
JP
Japan
Prior art keywords
chip
electrodes
external leading
electrode
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56097201A
Other languages
Japanese (ja)
Inventor
Tomokazu Maki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56097201A priority Critical patent/JPS57211772A/en
Publication of JPS57211772A publication Critical patent/JPS57211772A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To reduce the chip area of a high-frequency and high-output transistor by a method wherein external leading electrodes connected to a plurality of regions provided on a semiconductor chip are provided respectively and the contact surfaces of these electrodes have different height respectively. CONSTITUTION:A recessed section 4 is provided on a semiconductor chip 1 formed an element and both external leading electrodes have different contact surfaces in height which contact with a metal member or a container by providing one external leading electrode (emitter electrode) at the upper-step section and the other external leading electrode (base electrode) at the lower-step section (the recessed section 4). In this way, the chip can be fixed to the metal member or container by maintaining sufficient insulating even if the space between chip electrodes is narrow. Therefore, the chip area of a high-frequency and high- output transistor can be reduced.
JP56097201A 1981-06-23 1981-06-23 Semiconductor device Pending JPS57211772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56097201A JPS57211772A (en) 1981-06-23 1981-06-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56097201A JPS57211772A (en) 1981-06-23 1981-06-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57211772A true JPS57211772A (en) 1982-12-25

Family

ID=14185987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56097201A Pending JPS57211772A (en) 1981-06-23 1981-06-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57211772A (en)

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