JPS57211766A - Trimming capacitor - Google Patents

Trimming capacitor

Info

Publication number
JPS57211766A
JPS57211766A JP9719981A JP9719981A JPS57211766A JP S57211766 A JPS57211766 A JP S57211766A JP 9719981 A JP9719981 A JP 9719981A JP 9719981 A JP9719981 A JP 9719981A JP S57211766 A JPS57211766 A JP S57211766A
Authority
JP
Japan
Prior art keywords
capacitor
metal wire
metal
capacity
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9719981A
Other languages
Japanese (ja)
Inventor
Koichiro Misaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9719981A priority Critical patent/JPS57211766A/en
Publication of JPS57211766A publication Critical patent/JPS57211766A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To adjust the capacity of an internal compensating capacitor by a method wherein the internal compensating capacitor deciding band width is provided with a short-circuited metal wire and the metal wire is cut. CONSTITUTION:The first insulating film 3 is formed on an N type substrate 1. The second insulating films 5, 6 are thinly grown oxide films for capacitor layer insulation. The third insulating film 4 is formed with a thick oxide film. The first metal wires 8, 9 form one metal electrode of a main capacitor and that of a trimming element capacitor. The second metal wire 10 is for short circuit. The third metal wire is contacted through a high-density impurity layer 2 which is the other electrodes of all the capacitors including the trimming element capacitor and main capacitor and a contact window 7. This can reduce the capacity of the capacitor by cutting the second metal wire 10.
JP9719981A 1981-06-23 1981-06-23 Trimming capacitor Pending JPS57211766A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9719981A JPS57211766A (en) 1981-06-23 1981-06-23 Trimming capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9719981A JPS57211766A (en) 1981-06-23 1981-06-23 Trimming capacitor

Publications (1)

Publication Number Publication Date
JPS57211766A true JPS57211766A (en) 1982-12-25

Family

ID=14185924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9719981A Pending JPS57211766A (en) 1981-06-23 1981-06-23 Trimming capacitor

Country Status (1)

Country Link
JP (1) JPS57211766A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166256A (en) * 1986-12-26 1988-07-09 Toshiba Corp Semiconductor device and manufacture thereof
JPH01296657A (en) * 1988-05-24 1989-11-30 Mitsubishi Electric Corp Semiconductor device
EP0692799A2 (en) * 1994-07-15 1996-01-17 Plessey Semiconductors Limited Trimmable capacitor
WO2002037573A1 (en) * 2000-10-30 2002-05-10 Kabushiki Kaisha Toshiba Semiconductor device and its manufacturing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166256A (en) * 1986-12-26 1988-07-09 Toshiba Corp Semiconductor device and manufacture thereof
JPH01296657A (en) * 1988-05-24 1989-11-30 Mitsubishi Electric Corp Semiconductor device
EP0692799A2 (en) * 1994-07-15 1996-01-17 Plessey Semiconductors Limited Trimmable capacitor
EP0692799A3 (en) * 1994-07-15 1997-05-14 Plessey Semiconductors Ltd Trimmable capacitor
WO2002037573A1 (en) * 2000-10-30 2002-05-10 Kabushiki Kaisha Toshiba Semiconductor device and its manufacturing method
US6940132B2 (en) 2000-10-30 2005-09-06 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same

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