JPS57211758A - Electronic refrigerating element - Google Patents
Electronic refrigerating elementInfo
- Publication number
- JPS57211758A JPS57211758A JP9802281A JP9802281A JPS57211758A JP S57211758 A JPS57211758 A JP S57211758A JP 9802281 A JP9802281 A JP 9802281A JP 9802281 A JP9802281 A JP 9802281A JP S57211758 A JPS57211758 A JP S57211758A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layers
- electrode layer
- telluride
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
PURPOSE:To cool integrated circuit elements and the like, by arranging P type and N type semiconductor layers which perform cooling function by Peltier effect on an insulating substrate so as to face to each other and providing a conducting layer which bridges those semiconductor layers. CONSTITUTION:Electrode layers 2 and 3 formed on the aluminum insulating substrate 1. The P type semiconductor layer 4 comprising solid solution of bismuth telluride and antimony telluride is formed on the electrode layer 2. The N type semiconductor layer 5 comprising solid solution of bismuth telluride and selenium telluride is formed on the electrode layer 3. An insulating layer 6 is formed between said semiconductor layers. The conducting layer 7 which bridges the semiconductor layers 4 and 5 is formed. In this constitution, the potential of the electrode layer 3 is made positive, and a current is flowed to the electrode layer 2. Then the heat is taken out of the conducting layer 7.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9802281A JPS57211758A (en) | 1981-06-24 | 1981-06-24 | Electronic refrigerating element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9802281A JPS57211758A (en) | 1981-06-24 | 1981-06-24 | Electronic refrigerating element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57211758A true JPS57211758A (en) | 1982-12-25 |
Family
ID=14208253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9802281A Pending JPS57211758A (en) | 1981-06-24 | 1981-06-24 | Electronic refrigerating element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57211758A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10132763A1 (en) * | 2001-07-10 | 2003-01-30 | Bosch Gmbh Robert | Integrated semiconductor circuit with substrate carrying microwave circuit region(s) |
-
1981
- 1981-06-24 JP JP9802281A patent/JPS57211758A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10132763A1 (en) * | 2001-07-10 | 2003-01-30 | Bosch Gmbh Robert | Integrated semiconductor circuit with substrate carrying microwave circuit region(s) |
DE10132763B4 (en) * | 2001-07-10 | 2007-10-11 | Robert Bosch Gmbh | A semiconductor integrated circuit, a method of cooling a microwave circuit region, and a method of manufacturing a semiconductor integrated circuit |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1081477A (en) | Wrist watch incorporating a thermoelectric generator | |
US6043423A (en) | Thermoelectric device and thermoelectric module | |
EP0952611A3 (en) | Semiconductor device | |
GB1007190A (en) | Improvements in or relating to thermoelectric devices | |
US4049469A (en) | Film thermoelement | |
GB929282A (en) | Improvements in or relating to thermoelectric devices | |
JPS57211758A (en) | Electronic refrigerating element | |
GB1516033A (en) | Integrated switching circuit and logic circuits using this circuit | |
US3441449A (en) | Thermoelectric system | |
JPH0621518A (en) | Thermoelectric conversion element | |
US3188240A (en) | Copper oxide insulation layer for thermoelectric devices | |
JPS57166051A (en) | Semiconductor device | |
GB1351454A (en) | Light sensitive devices using semiconductor materials | |
DE3176475D1 (en) | Cooling means for integrated circuit chip device | |
JPS5693359A (en) | Semiconductor integrated circuit and manufacture | |
JPS57176780A (en) | P-n junction superconductive element | |
GB1038039A (en) | Thermoelectric module assembly technique | |
JPS55151359A (en) | Semiconductor device | |
JP2678765B2 (en) | Electronic cooler | |
JPS56146233A (en) | Semiconductor device | |
JPS6468961A (en) | Resistance element for semiconductor integrated circuit device | |
JPH01161879A (en) | Thermoelectric effect element | |
JPS57162356A (en) | Integrated circuit device | |
JPS5323564A (en) | Bump type semiconductor device | |
JPS5527773A (en) | Solid state pickup device |