GB1351454A - Light sensitive devices using semiconductor materials - Google Patents

Light sensitive devices using semiconductor materials

Info

Publication number
GB1351454A
GB1351454A GB584670A GB1351454DA GB1351454A GB 1351454 A GB1351454 A GB 1351454A GB 584670 A GB584670 A GB 584670A GB 1351454D A GB1351454D A GB 1351454DA GB 1351454 A GB1351454 A GB 1351454A
Authority
GB
United Kingdom
Prior art keywords
layer
regions
gold
cells
sulphide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB584670A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Research and Development Co Ltd
Original Assignee
International Research and Development Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Research and Development Co Ltd filed Critical International Research and Development Co Ltd
Publication of GB1351454A publication Critical patent/GB1351454A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
    • H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

1351454 Semi-conductor devices INTERNATIONAL RESEARCH & DEVELOPMENT CO Ltd 19 April 1971 [6 Feb 1970] 5846/70 Heading HlK An array of light sensitive cells is formed from a continuous semi-conductor layer of one conductivity type by dividing it into individual cells by regions of the opposite conductivity type, these regions serving to interconnect the cells. Rectangular metal electrodes 2 may be formed on an insulating substrate 1, and a semiconductor layer 3 formed thereon. The layer may be of cadmium sulphide, cadmium telluride, cadmium selenide or zinc selenide. Parts of the surface of the layer 3 are masked, and regions 4 converted to the opposite conductivity type, these regions overlying edge portions 'a' of the electrodes 2. Photovoltaic barrier layers 5 may be formed in the layer 3, and interconnecting metal strips 6 formed on layers 5 and regions 4 to reduce series resistance losses therebetween. In operation region 4 connects the electrode of one cell with the barrier layer of the adjoining cell. The cells may be solar cells, and the electrodes 2 of gold, chromium, gold on chromium, gold on nickel-chromium, aluminium or zinc. The substrate may be of a polyimide material, and strips 6 of gold or copper. Using a cadmium sulphide layer 3, the region 4 may be converted to copper sulphide by immersing in a solution containing cuprous ions. Similarly layers 5 may be formed by reacting the layer 3 with cuprous chloride to form cuprous sulphide.
GB584670A 1970-02-06 1970-02-06 Light sensitive devices using semiconductor materials Expired GB1351454A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB584670 1970-02-06

Publications (1)

Publication Number Publication Date
GB1351454A true GB1351454A (en) 1974-05-01

Family

ID=9803729

Family Applications (1)

Application Number Title Priority Date Filing Date
GB584670A Expired GB1351454A (en) 1970-02-06 1970-02-06 Light sensitive devices using semiconductor materials

Country Status (1)

Country Link
GB (1) GB1351454A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4144096A (en) * 1976-12-27 1979-03-13 Kabushiki Kaisha Suwa Seikosha Solar battery and method of manufacture
FR2410881A1 (en) * 1977-11-30 1979-06-29 Photon Power Inc METHODS FOR IMPROVING THE OPEN CIRCUIT VOLTAGE OF A SOLAR BATTERY
US4191794A (en) * 1978-05-11 1980-03-04 Westinghouse Electric Corp. Integrated solar cell array
DE3031907A1 (en) * 1979-08-23 1981-03-12 Unisearch Ltd., Kensington, Neusüdwales SOLAR CELL AND SOLAR CELL COMPOSITION AND METHOD FOR THEIR PRODUCTION.
FR2487581A1 (en) * 1980-07-25 1982-01-29 Eastman Kodak Co ASSEMBLY OF PHOTOVOLTAIC CELLS AND METHOD OF MANUFACTURING SUCH ASSEMBLY
US4443651A (en) * 1981-03-31 1984-04-17 Rca Corporation Series connected solar cells on a single substrate
US5017243A (en) * 1989-01-06 1991-05-21 Mitsubishi Denki Kabushiki Kaisha Solar cell and a production method therefor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4144096A (en) * 1976-12-27 1979-03-13 Kabushiki Kaisha Suwa Seikosha Solar battery and method of manufacture
FR2410881A1 (en) * 1977-11-30 1979-06-29 Photon Power Inc METHODS FOR IMPROVING THE OPEN CIRCUIT VOLTAGE OF A SOLAR BATTERY
US4191794A (en) * 1978-05-11 1980-03-04 Westinghouse Electric Corp. Integrated solar cell array
DE3031907A1 (en) * 1979-08-23 1981-03-12 Unisearch Ltd., Kensington, Neusüdwales SOLAR CELL AND SOLAR CELL COMPOSITION AND METHOD FOR THEIR PRODUCTION.
FR2487581A1 (en) * 1980-07-25 1982-01-29 Eastman Kodak Co ASSEMBLY OF PHOTOVOLTAIC CELLS AND METHOD OF MANUFACTURING SUCH ASSEMBLY
US4315096A (en) * 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses
US4443651A (en) * 1981-03-31 1984-04-17 Rca Corporation Series connected solar cells on a single substrate
US5017243A (en) * 1989-01-06 1991-05-21 Mitsubishi Denki Kabushiki Kaisha Solar cell and a production method therefor

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Legal Events

Date Code Title Description
PS Patent sealed
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee