ES467972A1 - Photovoltaic cell array - Google Patents

Photovoltaic cell array

Info

Publication number
ES467972A1
ES467972A1 ES467972A ES467972A ES467972A1 ES 467972 A1 ES467972 A1 ES 467972A1 ES 467972 A ES467972 A ES 467972A ES 467972 A ES467972 A ES 467972A ES 467972 A1 ES467972 A1 ES 467972A1
Authority
ES
Spain
Prior art keywords
substrate
coating
lower electrodes
electrically conductive
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES467972A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ses Inc
Original Assignee
Ses Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/827,927 external-priority patent/US4127424A/en
Application filed by Ses Inc filed Critical Ses Inc
Publication of ES467972A1 publication Critical patent/ES467972A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
    • H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

An improved method of manufacturing an integrated set of connected thin film photovoltaic cells, comprising: arranging a substrate of insulating material, coating a main surface of said substrate with a plurality of lower electrically conductive electrodes, one of said lower electrodes being spaced apart for each of said cells, coating each of said lower electrodes, except a part adjacent to an edge, with a film, of a first semiconductor material of a conductivity type, coating each of said films of a conductivity type with a relatively thin film of a second semiconductor material of an opposite type of conductivity, and forming a pn junction therewith, fixing an upper light transmitting electrode on each of said films of second semiconductor material, and connecting upper and lower electrodes of a battery with selected upper and lower electrodes of adjacent stacks, to provide a series or parallel arrangement of the stacks, wherein the improvement comprises applying a paste of electrically conductive ceramic material on a substrate of insulating ceramic material as a coating and treating the substrate with heat coated to dry and remove the screening materials from said paste and bond said electrically conductive material to said substrate. (Machine-translation by Google Translate, not legally binding)
ES467972A 1976-12-06 1978-03-17 Photovoltaic cell array Expired ES467972A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US74784976A 1976-12-06 1976-12-06
US05/827,927 US4127424A (en) 1976-12-06 1977-08-26 Photovoltaic cell array

Publications (1)

Publication Number Publication Date
ES467972A1 true ES467972A1 (en) 1978-11-01

Family

ID=27114832

Family Applications (2)

Application Number Title Priority Date Filing Date
ES464679A Expired ES464679A1 (en) 1976-12-06 1977-12-02 Photovoltaic cell array
ES467972A Expired ES467972A1 (en) 1976-12-06 1978-03-17 Photovoltaic cell array

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES464679A Expired ES464679A1 (en) 1976-12-06 1977-12-02 Photovoltaic cell array

Country Status (12)

Country Link
JP (1) JPS5370781A (en)
BR (1) BR7707957A (en)
CA (1) CA1085946A (en)
DE (1) DE2751393A1 (en)
ES (2) ES464679A1 (en)
FR (1) FR2373165A1 (en)
GB (1) GB1559247A (en)
IL (1) IL53276A (en)
IN (1) IN148687B (en)
IT (1) IT1091265B (en)
MX (1) MX144753A (en)
NL (1) NL7712838A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821827B2 (en) * 1979-02-09 1983-05-04 三洋電機株式会社 photovoltaic device
GB2117971A (en) * 1982-04-05 1983-10-19 Hitachi Ltd Amorphous silicon photovoltaic device
JPH0530369Y2 (en) * 1984-10-09 1993-08-03
JPS62211060A (en) * 1986-03-12 1987-09-17 オリンパス光学工業株式会社 High frequency treatment tool
DE202008008743U1 (en) * 2008-07-02 2009-11-19 Aleo Solar Ag Photovoltaic solar module

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2820841A (en) * 1956-05-10 1958-01-21 Clevite Corp Photovoltaic cells and methods of fabricating same
FR1315539A (en) * 1961-03-14 1963-01-18 Western Electric Co Set of solar cells for artificial satellites
US3833425A (en) * 1972-02-23 1974-09-03 Us Navy Solar cell array
AU7005674A (en) * 1974-03-01 1975-12-18 Univ Delaware Photovoltaic cell

Also Published As

Publication number Publication date
FR2373165B1 (en) 1981-03-20
ES464679A1 (en) 1978-09-01
BR7707957A (en) 1978-09-05
IN148687B (en) 1981-05-09
DE2751393A1 (en) 1978-06-08
MX144753A (en) 1981-11-19
GB1559247A (en) 1980-01-16
FR2373165A1 (en) 1978-06-30
NL7712838A (en) 1978-06-08
IT1091265B (en) 1985-07-06
IL53276A0 (en) 1978-01-31
JPS5370781A (en) 1978-06-23
IL53276A (en) 1980-06-30
CA1085946A (en) 1980-09-16

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19981103