JPS57210677A - Manufacture of hall element - Google Patents

Manufacture of hall element

Info

Publication number
JPS57210677A
JPS57210677A JP56095596A JP9559681A JPS57210677A JP S57210677 A JPS57210677 A JP S57210677A JP 56095596 A JP56095596 A JP 56095596A JP 9559681 A JP9559681 A JP 9559681A JP S57210677 A JPS57210677 A JP S57210677A
Authority
JP
Japan
Prior art keywords
film
forming
laser beam
irregularity
approx
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56095596A
Other languages
Japanese (ja)
Other versions
JPS6352790B2 (en
Inventor
Junichi Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP56095596A priority Critical patent/JPS57210677A/en
Publication of JPS57210677A publication Critical patent/JPS57210677A/en
Publication of JPS6352790B2 publication Critical patent/JPS6352790B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)

Abstract

PURPOSE:To obtain a Hall element without irregularity by selectively forming a Hall effect semiconductor film with a mask and linearly removing the film physically by a laser beam or the like, thereby forming a cross-shaped magnetism sensitive part. CONSTITUTION:An InSb is deposited on a substrate 1 which is made of a ferrite substrate 1a and a protective insulating layer 1b with a mask, thereby forming a Hall effect semiconductor film 5. Then, Cr and Ag are sequentially deposited, thereby forming electrodes 3a, 3b, 3c and 3d. At this time, it is noted that part is superposed with electrode connecting parts 2a-2d of the film 5. Then, a laser beam of approx. 1-3W of power is emitted to the film 5 under the conditions of 50mm./sec of speed and approx. 30-50mum of width, a linear groove 7 of specific pattern is fored, and a cross-shaped magnetism sensitive part 2 is formed. Since a trimming of resistance control and unbalanced voltage control can be performed when the groove 7 is formed with the laser beam, the irregularity in the characteristics of the product can be reduced.
JP56095596A 1981-06-19 1981-06-19 Manufacture of hall element Granted JPS57210677A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56095596A JPS57210677A (en) 1981-06-19 1981-06-19 Manufacture of hall element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56095596A JPS57210677A (en) 1981-06-19 1981-06-19 Manufacture of hall element

Publications (2)

Publication Number Publication Date
JPS57210677A true JPS57210677A (en) 1982-12-24
JPS6352790B2 JPS6352790B2 (en) 1988-10-20

Family

ID=14141941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56095596A Granted JPS57210677A (en) 1981-06-19 1981-06-19 Manufacture of hall element

Country Status (1)

Country Link
JP (1) JPS57210677A (en)

Also Published As

Publication number Publication date
JPS6352790B2 (en) 1988-10-20

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