JPS57210676A - Substrate for electrode - Google Patents
Substrate for electrodeInfo
- Publication number
- JPS57210676A JPS57210676A JP56095197A JP9519781A JPS57210676A JP S57210676 A JPS57210676 A JP S57210676A JP 56095197 A JP56095197 A JP 56095197A JP 9519781 A JP9519781 A JP 9519781A JP S57210676 A JPS57210676 A JP S57210676A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- film
- transparent
- low reflecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 230000005540 biological transmission Effects 0.000 abstract 3
- 239000011521 glass Substances 0.000 abstract 2
- 238000002386 leaching Methods 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain a substrate for a high transmission electrode in a simple structure by leaching both side surfaces of a glass plate to form low reflecting layers, and forming transparent electrode film on the low reflecting layer of one side, thereby reducing reflecting loss of incident light. CONSTITUTION:Both side surfaces of a glass 15 capable of leaching are leached, thereby forming low reflecting layers 16, 16' of 2-3mum of thickness. Then, an ITO (indium-tin oxide) film of transparent electrode material is accumulated by an ordinary vacuum deposition method in a thickness of approx. 300Angstrom . A sintered oxidized indium containing 5wt% of oxidized tin is used as a material to be deposited. Since the light reflection in the boundary between the transparent substrate and the air or between the light transmission substrate and the transparent conductive film can be reduced in this manner, the substrate for the electrode of high transmission coefficient can be obtained. This can be utilized for a solar battery, an electroluminescent display unit or the like.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56095197A JPS57210676A (en) | 1981-06-22 | 1981-06-22 | Substrate for electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56095197A JPS57210676A (en) | 1981-06-22 | 1981-06-22 | Substrate for electrode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57210676A true JPS57210676A (en) | 1982-12-24 |
JPS6257267B2 JPS6257267B2 (en) | 1987-11-30 |
Family
ID=14131021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56095197A Granted JPS57210676A (en) | 1981-06-22 | 1981-06-22 | Substrate for electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57210676A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01236661A (en) * | 1988-03-17 | 1989-09-21 | Nippon Sheet Glass Co Ltd | Manufacture of thin film solar cell |
WO2011006829A1 (en) * | 2009-07-17 | 2011-01-20 | Saint-Gobain Glass France | Method for producing a coated and reflection-reducing pane |
-
1981
- 1981-06-22 JP JP56095197A patent/JPS57210676A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01236661A (en) * | 1988-03-17 | 1989-09-21 | Nippon Sheet Glass Co Ltd | Manufacture of thin film solar cell |
WO2011006829A1 (en) * | 2009-07-17 | 2011-01-20 | Saint-Gobain Glass France | Method for producing a coated and reflection-reducing pane |
Also Published As
Publication number | Publication date |
---|---|
JPS6257267B2 (en) | 1987-11-30 |
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