JPS57209897A - Method and apparatus for preparation of single crystal of compound semiconductor - Google Patents

Method and apparatus for preparation of single crystal of compound semiconductor

Info

Publication number
JPS57209897A
JPS57209897A JP9363381A JP9363381A JPS57209897A JP S57209897 A JPS57209897 A JP S57209897A JP 9363381 A JP9363381 A JP 9363381A JP 9363381 A JP9363381 A JP 9363381A JP S57209897 A JPS57209897 A JP S57209897A
Authority
JP
Japan
Prior art keywords
line
furnaces
furnace
seed
shoulder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9363381A
Other languages
English (en)
Other versions
JPS5941958B2 (ja
Inventor
Shinichi Akai
Takashi Shimoda
Keiichiro Fujita
Nobuhiro Kito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP9363381A priority Critical patent/JPS5941958B2/ja
Publication of JPS57209897A publication Critical patent/JPS57209897A/ja
Publication of JPS5941958B2 publication Critical patent/JPS5941958B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP9363381A 1981-06-17 1981-06-17 化合物半導体単結晶の製造方法及び装置 Expired JPS5941958B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9363381A JPS5941958B2 (ja) 1981-06-17 1981-06-17 化合物半導体単結晶の製造方法及び装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9363381A JPS5941958B2 (ja) 1981-06-17 1981-06-17 化合物半導体単結晶の製造方法及び装置

Publications (2)

Publication Number Publication Date
JPS57209897A true JPS57209897A (en) 1982-12-23
JPS5941958B2 JPS5941958B2 (ja) 1984-10-11

Family

ID=14087734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9363381A Expired JPS5941958B2 (ja) 1981-06-17 1981-06-17 化合物半導体単結晶の製造方法及び装置

Country Status (1)

Country Link
JP (1) JPS5941958B2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02145499A (ja) * 1988-12-28 1990-06-04 Tsuaitowan Faaren Gonie Jishu Ienjiou Yuen 砒化ガリウム単結晶の成長方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02145499A (ja) * 1988-12-28 1990-06-04 Tsuaitowan Faaren Gonie Jishu Ienjiou Yuen 砒化ガリウム単結晶の成長方法

Also Published As

Publication number Publication date
JPS5941958B2 (ja) 1984-10-11

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