JPS57208732A - Gate driving circuit for gate turn-off thyristor - Google Patents
Gate driving circuit for gate turn-off thyristorInfo
- Publication number
- JPS57208732A JPS57208732A JP56094956A JP9495681A JPS57208732A JP S57208732 A JPS57208732 A JP S57208732A JP 56094956 A JP56094956 A JP 56094956A JP 9495681 A JP9495681 A JP 9495681A JP S57208732 A JPS57208732 A JP S57208732A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- gto1
- turn
- cathode
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
Abstract
PURPOSE:To reduce the generated loss of a Zener diode for voltage cliper, by supplying base current of a transistor (TR) for inverse bias supply which is conducted when a gate turn-off thyristor GTO is turned off, through the cathode and gate of the GTO. CONSTITUTION:A GTO1 is turned on by applying a signal 14 to a transistor (TR)10. To turn off the GTO1, a signal 12a is applied to a TR6. Then, a part of a current via the cathode and gate of the GTO1 is applied to the base of the TR6. Thus, the TR6 is turned on, an inverted bias is applied to the cathode and gate of the GTO1 and the GTO1 tends to turn off. Thus, the impedance between the cathode and gate of the GTO1 starts increasing and the base current of the TR6 is reduced, then the voltage is dropped across a Zener diode 3 and the current flowing to the diode 3 is reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56094956A JPS57208732A (en) | 1981-06-18 | 1981-06-18 | Gate driving circuit for gate turn-off thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56094956A JPS57208732A (en) | 1981-06-18 | 1981-06-18 | Gate driving circuit for gate turn-off thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57208732A true JPS57208732A (en) | 1982-12-21 |
Family
ID=14124378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56094956A Pending JPS57208732A (en) | 1981-06-18 | 1981-06-18 | Gate driving circuit for gate turn-off thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57208732A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60115A (en) * | 1983-06-15 | 1985-01-05 | Fuji Electric Co Ltd | Gate driving circuit of gate turn-off thyristor |
-
1981
- 1981-06-18 JP JP56094956A patent/JPS57208732A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60115A (en) * | 1983-06-15 | 1985-01-05 | Fuji Electric Co Ltd | Gate driving circuit of gate turn-off thyristor |
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