JPS5720428A - Manufacture of mis type semiconductor device - Google Patents

Manufacture of mis type semiconductor device

Info

Publication number
JPS5720428A
JPS5720428A JP9531680A JP9531680A JPS5720428A JP S5720428 A JPS5720428 A JP S5720428A JP 9531680 A JP9531680 A JP 9531680A JP 9531680 A JP9531680 A JP 9531680A JP S5720428 A JPS5720428 A JP S5720428A
Authority
JP
Japan
Prior art keywords
substrate
molecular beam
deposition
omegacm
lifetime
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9531680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS631747B2 (enrdf_load_stackoverflow
Inventor
Tetsuo Minato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP9531680A priority Critical patent/JPS5720428A/ja
Publication of JPS5720428A publication Critical patent/JPS5720428A/ja
Publication of JPS631747B2 publication Critical patent/JPS631747B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02477—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Led Devices (AREA)
JP9531680A 1980-07-10 1980-07-10 Manufacture of mis type semiconductor device Granted JPS5720428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9531680A JPS5720428A (en) 1980-07-10 1980-07-10 Manufacture of mis type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9531680A JPS5720428A (en) 1980-07-10 1980-07-10 Manufacture of mis type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5720428A true JPS5720428A (en) 1982-02-02
JPS631747B2 JPS631747B2 (enrdf_load_stackoverflow) 1988-01-13

Family

ID=14134341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9531680A Granted JPS5720428A (en) 1980-07-10 1980-07-10 Manufacture of mis type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5720428A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58165386A (ja) * 1982-03-26 1983-09-30 Hiroshi Kukimoto 半導体発光素子およびその製造方法
JPS62229846A (ja) * 1986-03-30 1987-10-08 Nippon Seiki Co Ltd ２−６族化合物半導体素子の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0448156U (enrdf_load_stackoverflow) * 1990-08-27 1992-04-23

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5552220A (en) * 1978-10-13 1980-04-16 Fujitsu Ltd Manufacturing of semiconductor intergrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5552220A (en) * 1978-10-13 1980-04-16 Fujitsu Ltd Manufacturing of semiconductor intergrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58165386A (ja) * 1982-03-26 1983-09-30 Hiroshi Kukimoto 半導体発光素子およびその製造方法
JPS62229846A (ja) * 1986-03-30 1987-10-08 Nippon Seiki Co Ltd ２−６族化合物半導体素子の製造方法

Also Published As

Publication number Publication date
JPS631747B2 (enrdf_load_stackoverflow) 1988-01-13

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