JPS57198639A - Measurement for impurity - Google Patents

Measurement for impurity

Info

Publication number
JPS57198639A
JPS57198639A JP8401181A JP8401181A JPS57198639A JP S57198639 A JPS57198639 A JP S57198639A JP 8401181 A JP8401181 A JP 8401181A JP 8401181 A JP8401181 A JP 8401181A JP S57198639 A JPS57198639 A JP S57198639A
Authority
JP
Japan
Prior art keywords
trap
hole
temperature
crystal
measured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8401181A
Other languages
Japanese (ja)
Other versions
JPS636142B2 (en
Inventor
Kazumi Kasai
Kuninori Kitahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8401181A priority Critical patent/JPS57198639A/en
Publication of JPS57198639A publication Critical patent/JPS57198639A/en
Publication of JPS636142B2 publication Critical patent/JPS636142B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To clarify whether deep impurity level is electron trap or hole trap by using the measured result of the light transient response of hole current (voltage). CONSTITUTION:A constant voltage electric field E and vertical magnetic field B are applied to a semiconductor crystal 1 and the occupancy rate of the electrons at capture level in the crystal or holes is changed by irradiating pulse light and a generated transient response signal is measured 4 at the hole terminal 3 in the crystal and is plotted by changing crystal temperature. When carriers are electrons, signals in solid lines are obtained, and in the case of holes, signals in dashed lines are obtained and the sum of these lines is measured. Observation is made for temperature T and a difference, sigmaxy(t1)-sigmaxy(t2) in electric conductivity is plotted. A positive signal is obtained at the temperature T1 representing the trap resulting in electron current and a negative signal is obtained at the temperature T2 representing the trap resulting in hole current and information for obtaining the energy level of each trap can be obtained. Furthermore, whether the electron trap or hole trap can be decided from the code of a signal peak.
JP8401181A 1981-06-01 1981-06-01 Measurement for impurity Granted JPS57198639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8401181A JPS57198639A (en) 1981-06-01 1981-06-01 Measurement for impurity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8401181A JPS57198639A (en) 1981-06-01 1981-06-01 Measurement for impurity

Publications (2)

Publication Number Publication Date
JPS57198639A true JPS57198639A (en) 1982-12-06
JPS636142B2 JPS636142B2 (en) 1988-02-08

Family

ID=13818643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8401181A Granted JPS57198639A (en) 1981-06-01 1981-06-01 Measurement for impurity

Country Status (1)

Country Link
JP (1) JPS57198639A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100446A (en) * 1983-11-05 1985-06-04 Fujitsu Ltd Measuring method of deep local level
JPS63261846A (en) * 1987-04-20 1988-10-28 Nippon Telegr & Teleph Corp <Ntt> Evaluation of semiconductor characteristics

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100446A (en) * 1983-11-05 1985-06-04 Fujitsu Ltd Measuring method of deep local level
JPS63261846A (en) * 1987-04-20 1988-10-28 Nippon Telegr & Teleph Corp <Ntt> Evaluation of semiconductor characteristics

Also Published As

Publication number Publication date
JPS636142B2 (en) 1988-02-08

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