JPS57198639A - Measurement for impurity - Google Patents
Measurement for impurityInfo
- Publication number
- JPS57198639A JPS57198639A JP8401181A JP8401181A JPS57198639A JP S57198639 A JPS57198639 A JP S57198639A JP 8401181 A JP8401181 A JP 8401181A JP 8401181 A JP8401181 A JP 8401181A JP S57198639 A JPS57198639 A JP S57198639A
- Authority
- JP
- Japan
- Prior art keywords
- trap
- hole
- temperature
- crystal
- measured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
Abstract
PURPOSE:To clarify whether deep impurity level is electron trap or hole trap by using the measured result of the light transient response of hole current (voltage). CONSTITUTION:A constant voltage electric field E and vertical magnetic field B are applied to a semiconductor crystal 1 and the occupancy rate of the electrons at capture level in the crystal or holes is changed by irradiating pulse light and a generated transient response signal is measured 4 at the hole terminal 3 in the crystal and is plotted by changing crystal temperature. When carriers are electrons, signals in solid lines are obtained, and in the case of holes, signals in dashed lines are obtained and the sum of these lines is measured. Observation is made for temperature T and a difference, sigmaxy(t1)-sigmaxy(t2) in electric conductivity is plotted. A positive signal is obtained at the temperature T1 representing the trap resulting in electron current and a negative signal is obtained at the temperature T2 representing the trap resulting in hole current and information for obtaining the energy level of each trap can be obtained. Furthermore, whether the electron trap or hole trap can be decided from the code of a signal peak.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8401181A JPS57198639A (en) | 1981-06-01 | 1981-06-01 | Measurement for impurity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8401181A JPS57198639A (en) | 1981-06-01 | 1981-06-01 | Measurement for impurity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57198639A true JPS57198639A (en) | 1982-12-06 |
| JPS636142B2 JPS636142B2 (en) | 1988-02-08 |
Family
ID=13818643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8401181A Granted JPS57198639A (en) | 1981-06-01 | 1981-06-01 | Measurement for impurity |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57198639A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60100446A (en) * | 1983-11-05 | 1985-06-04 | Fujitsu Ltd | How to measure deep localized levels |
| JPS63261846A (en) * | 1987-04-20 | 1988-10-28 | Nippon Telegr & Teleph Corp <Ntt> | Evaluation of semiconductor characteristics |
-
1981
- 1981-06-01 JP JP8401181A patent/JPS57198639A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60100446A (en) * | 1983-11-05 | 1985-06-04 | Fujitsu Ltd | How to measure deep localized levels |
| JPS63261846A (en) * | 1987-04-20 | 1988-10-28 | Nippon Telegr & Teleph Corp <Ntt> | Evaluation of semiconductor characteristics |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS636142B2 (en) | 1988-02-08 |
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