JPS576489A - Magnetic bubble memory reading circuit - Google Patents

Magnetic bubble memory reading circuit

Info

Publication number
JPS576489A
JPS576489A JP8167280A JP8167280A JPS576489A JP S576489 A JPS576489 A JP S576489A JP 8167280 A JP8167280 A JP 8167280A JP 8167280 A JP8167280 A JP 8167280A JP S576489 A JPS576489 A JP S576489A
Authority
JP
Japan
Prior art keywords
detector
circuit
threshold voltage
magnetic bubble
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8167280A
Other languages
Japanese (ja)
Inventor
Satoshi Hiraide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8167280A priority Critical patent/JPS576489A/en
Publication of JPS576489A publication Critical patent/JPS576489A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0866—Detecting magnetic domains

Abstract

PURPOSE:To widen an output margin, by providing a threshold voltage generating circuit by the same number as the number of magnetic memory modules. CONSTITUTION:When for instance, a magnetic bubble memory module 4 among said modules 1-4 is selected by module selective switches 16-19, a detecting current flows to earth through a switch 19, an active detector 9, a dummy detector 14 and diodes 23, 28. In this case, when a magnetic bubble passes through on the detector, a detecting bubble output signal is obtained from the detector. This output signal is inputted to a terminal A of a comparator circuit 37 through an amplifier 32 and a DC reproducing circuit 33. On the other hand, when a threshold voltage generating circuit 384 corresponding to the module 4 is selected, a current flows to earth through a threshold level setting variable resistor 51 and a switching circuit 47 from an electric power source VE1, the threshold voltage is inputted to a terminal B of the comparator circuit 37, and a decision signal is outputted. In this way, the output margin can be widened.
JP8167280A 1980-06-16 1980-06-16 Magnetic bubble memory reading circuit Pending JPS576489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8167280A JPS576489A (en) 1980-06-16 1980-06-16 Magnetic bubble memory reading circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8167280A JPS576489A (en) 1980-06-16 1980-06-16 Magnetic bubble memory reading circuit

Publications (1)

Publication Number Publication Date
JPS576489A true JPS576489A (en) 1982-01-13

Family

ID=13752828

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8167280A Pending JPS576489A (en) 1980-06-16 1980-06-16 Magnetic bubble memory reading circuit

Country Status (1)

Country Link
JP (1) JPS576489A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5352550A (en) * 1988-11-22 1994-10-04 Hitachi, Ltd. Mask for manufacturing semiconductor devices and method of manufacture thereof
USRE35315E (en) * 1989-10-02 1996-08-20 Okamoto; Yoshihiko Mask for manufacturing semiconductor device and method of manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5352550A (en) * 1988-11-22 1994-10-04 Hitachi, Ltd. Mask for manufacturing semiconductor devices and method of manufacture thereof
USRE35315E (en) * 1989-10-02 1996-08-20 Okamoto; Yoshihiko Mask for manufacturing semiconductor device and method of manufacture thereof

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