JPS57196540A - Test device - Google Patents

Test device

Info

Publication number
JPS57196540A
JPS57196540A JP57038254A JP3825482A JPS57196540A JP S57196540 A JPS57196540 A JP S57196540A JP 57038254 A JP57038254 A JP 57038254A JP 3825482 A JP3825482 A JP 3825482A JP S57196540 A JPS57196540 A JP S57196540A
Authority
JP
Japan
Prior art keywords
test device
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57038254A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6321342B2 (enExample
Inventor
Oo Rangunaa Giyunsaa
Shii Fuaifuaa Hansu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS57196540A publication Critical patent/JPS57196540A/ja
Publication of JPS6321342B2 publication Critical patent/JPS6321342B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Tests Of Electronic Circuits (AREA)
JP57038254A 1981-05-26 1982-03-12 Test device Granted JPS57196540A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/267,118 US4415851A (en) 1981-05-26 1981-05-26 System for contactless testing of multi-layer ceramics

Publications (2)

Publication Number Publication Date
JPS57196540A true JPS57196540A (en) 1982-12-02
JPS6321342B2 JPS6321342B2 (enExample) 1988-05-06

Family

ID=23017389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57038254A Granted JPS57196540A (en) 1981-05-26 1982-03-12 Test device

Country Status (4)

Country Link
US (1) US4415851A (enExample)
EP (1) EP0066071B1 (enExample)
JP (1) JPS57196540A (enExample)
DE (1) DE3272522D1 (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4621232A (en) * 1981-05-26 1986-11-04 International Business Machines Corporation Inspection of unsintered single layer or multilayer ceramics using a broad area electrical contacting structure
JPS5933996B2 (ja) * 1981-05-26 1984-08-20 インターナシヨナルビジネス マシーンズ コーポレーシヨン 未焼結セラミツクの検査装置
DE3235461A1 (de) * 1982-09-24 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Verfahren zur kontaktlosen pruefung eines objekts, insbesondere von mikroverdrahtungen, mit einer korpuskularstrahl-sonde
DE3235449A1 (de) * 1982-09-24 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Flying-spot scanner fuer lichtmikroskopische untersuchungen in einem raster-elektronenmikroskop und verfahren zu seinem betrieb
EP0166912B1 (de) * 1984-06-01 1990-08-29 Siemens Aktiengesellschaft Verfahren zur elektrischen Prüfung von Mikroverdrahtungen mit Hilfe von Korpuskularsonden
US4786864A (en) * 1985-03-29 1988-11-22 International Business Machines Corporation Photon assisted tunneling testing of passivated integrated circuits
US4644264A (en) * 1985-03-29 1987-02-17 International Business Machines Corporation Photon assisted tunneling testing of passivated integrated circuits
US4695794A (en) * 1985-05-31 1987-09-22 Santa Barbara Research Center Voltage calibration in E-beam probe using optical flooding
DE3621045A1 (de) * 1985-06-24 1987-01-02 Nippon Telegraph & Telephone Strahlerzeugende vorrichtung
JPH0682718B2 (ja) * 1985-08-12 1994-10-19 日本電信電話株式会社 電子デバイスの試験装置およびその使用方法
EP0264482B1 (en) * 1986-10-23 1991-12-18 International Business Machines Corporation Method for contactless testing of integrated circuit packaging boards under atmospheric conditions
US4843330A (en) * 1986-10-30 1989-06-27 International Business Machines Corporation Electron beam contactless testing system with grid bias switching
NL8700933A (nl) * 1987-04-21 1988-11-16 Philips Nv Testmethode voor lcd-elementen.
US4812756A (en) * 1987-08-26 1989-03-14 International Business Machines Corporation Contactless technique for semicondutor wafer testing
JPH065691B2 (ja) * 1987-09-26 1994-01-19 株式会社東芝 半導体素子の試験方法および試験装置
US5057773A (en) * 1989-03-21 1991-10-15 International Business Machines Corporation Method for opens/shorts testing of capacitively coupled networks in substrates using electron beams
US4943769A (en) * 1989-03-21 1990-07-24 International Business Machines Corporation Apparatus and method for opens/shorts testing of capacitively coupled networks in substrates using electron beams
US4970461A (en) * 1989-06-26 1990-11-13 Lepage Andrew J Method and apparatus for non-contact opens/shorts testing of electrical circuits
US5216359A (en) * 1991-01-18 1993-06-01 University Of North Carolina Electro-optical method and apparatus for testing integrated circuits
DE19525081B4 (de) * 1995-07-10 2006-06-29 Display Products Group, Inc., Hayward Verfahren und Vorrichtung zum Testen der Funktion von Mikrostrukturelementen
US5587664A (en) * 1995-07-12 1996-12-24 Exsight Ltd. Laser-induced metallic plasma for non-contact inspection
US5781017A (en) * 1996-04-26 1998-07-14 Sandia Corporation Capacitive charge generation apparatus and method for testing circuits
EP0853243A3 (en) * 1997-01-13 1999-07-28 Schlumberger Technologies, Inc. Method and apparatus for detecting defects in wafers
US6504393B1 (en) 1997-07-15 2003-01-07 Applied Materials, Inc. Methods and apparatus for testing semiconductor and integrated circuit structures
US6252412B1 (en) 1999-01-08 2001-06-26 Schlumberger Technologies, Inc. Method of detecting defects in patterned substrates
US6512385B1 (en) 1999-07-26 2003-01-28 Paul Pfaff Method for testing a device under test including the interference of two beams
KR100351059B1 (ko) * 2000-11-23 2002-09-05 삼성전자 주식회사 반도체 소자의 전기적 결함 검사 장치, 이를 이용한 반도체 소자의 전기적 결함 검사 방법
US6359451B1 (en) 2000-02-11 2002-03-19 Image Graphics Incorporated System for contactless testing of printed circuit boards
AU3354401A (en) 2000-02-14 2001-08-20 Eco 3 Max Inc. Process for removing volatile organic compounds from an air stream and apparatustherefor
US7733499B2 (en) 2001-12-06 2010-06-08 Attofemto, Inc. Method for optically testing semiconductor devices
US7206078B2 (en) * 2002-05-03 2007-04-17 Attofemto, Inc. Non-destructive testing system using a laser beam
US8462350B2 (en) 2001-12-06 2013-06-11 Attofemto, Inc. Optically enhanced holographic interferometric testing methods for the development and evaluation of semiconductor devices, materials, wafers, and for monitoring all phases of development and manufacture
US7400411B2 (en) * 2001-12-06 2008-07-15 Attofemto, Inc. Method for optically testing semiconductor devices
US9952161B2 (en) 2001-12-06 2018-04-24 Attofemto, Inc. Methods for obtaining and analyzing digital interferometric data for computer testing and developing semiconductor and anisotropic devices and materials
US7528614B2 (en) * 2004-12-22 2009-05-05 Applied Materials, Inc. Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam
US7176468B2 (en) * 2004-09-16 2007-02-13 Kla-Tencor Technologies Corporation Method for charging substrate to a potential
US7253410B1 (en) 2005-03-16 2007-08-07 Kla-Tencor Technologies Corporation Charge-control pre-scanning for e-beam imaging
US7560939B1 (en) 2006-02-17 2009-07-14 Kla-Tencor Technologies Corporation Electrical defect detection using pre-charge and sense scanning with prescribed delays
US7488938B1 (en) 2006-08-23 2009-02-10 Kla-Tencor Technologies Corporation Charge-control method and apparatus for electron beam imaging
US8586923B1 (en) * 2012-06-21 2013-11-19 International Business Machines Corporation Low-voltage transmission electron microscopy

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS518314A (en) * 1974-07-11 1976-01-23 Sumitomo Shipbuild Machinery Sementokurinkaano seizohoho

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3373353A (en) * 1965-09-30 1968-03-12 Navy Usa Electron beam scanning system for quality control of materials
US3531716A (en) * 1967-06-16 1970-09-29 Agency Ind Science Techn Method of testing an electronic device by use of an electron beam
US3549999A (en) * 1968-06-05 1970-12-22 Gen Electric Method and apparatus for testing circuits by measuring secondary emission electrons generated by electron beam bombardment of the pulsed circuit
GB1286454A (en) * 1968-08-24 1972-08-23 Cambridge Scientific Instr Ltd Surface potential analysis by electron beams
US3588347A (en) * 1969-03-13 1971-06-28 Western Electric Co Method and apparatus for aligning a mask and a substrate using infrared radiation
JPS4823385A (enExample) * 1971-07-28 1973-03-26
DE2207546A1 (de) * 1972-02-18 1973-08-23 Ibm Deutschland Verfahren zum pruefen des elektrischen durchganges
US3882532A (en) * 1972-07-03 1975-05-06 Ibm Externally accessing mechanically difficult to access circuit nodes in integrated circuits
US3796947A (en) * 1973-02-27 1974-03-12 Bell Telephone Labor Inc Electron beam testing of film integrated circuits
US3961190A (en) * 1975-03-06 1976-06-01 International Business Machines Corporation Voltage contrast detector for a scanning electron beam instrument
DE2702444C3 (de) * 1977-01-20 1980-10-09 Siemens Ag, 1000 Berlin Und 8000 Muenchen Korpuskularstrahloptisches Gerät zur Abbildung einer Maske auf ein Präparat
US4139774A (en) * 1977-02-09 1979-02-13 Hitachi, Ltd. Apparatus for irradiating a specimen by an electron beam
JPS5472980A (en) * 1977-11-24 1979-06-11 Hitachi Ltd Electron-beam drawing unit
US4149085A (en) * 1978-01-16 1979-04-10 International Business Machines Corporation Automatic overlay measurements using an electronic beam system as a measurement tool
US4169244A (en) * 1978-02-03 1979-09-25 Plows Graham S Electron probe testing, analysis and fault diagnosis in electronic circuits
DE2823642A1 (de) * 1978-05-30 1980-01-03 Siemens Ag Verfahren zur beruehrungslosen potentialmessung an einem elektronischen bauelement
DE2824308A1 (de) * 1978-06-02 1979-12-13 Siemens Ag Verfahren zum einpraegen einer spannung mit einem elektronenstrahl
US4172228A (en) * 1978-06-30 1979-10-23 Nasa Method for analyzing radiation sensitivity of integrated circuits
US4287473A (en) * 1979-05-25 1981-09-01 The United States Of America As Represented By The United States Department Of Energy Nondestructive method for detecting defects in photodetector and solar cell devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS518314A (en) * 1974-07-11 1976-01-23 Sumitomo Shipbuild Machinery Sementokurinkaano seizohoho

Also Published As

Publication number Publication date
US4415851A (en) 1983-11-15
EP0066071A1 (en) 1982-12-08
EP0066071B1 (en) 1986-08-13
DE3272522D1 (en) 1986-09-18
JPS6321342B2 (enExample) 1988-05-06

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