JPS57196540A - Test device - Google Patents
Test deviceInfo
- Publication number
- JPS57196540A JPS57196540A JP57038254A JP3825482A JPS57196540A JP S57196540 A JPS57196540 A JP S57196540A JP 57038254 A JP57038254 A JP 57038254A JP 3825482 A JP3825482 A JP 3825482A JP S57196540 A JPS57196540 A JP S57196540A
- Authority
- JP
- Japan
- Prior art keywords
- test device
- test
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/305—Contactless testing using electron beams
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/267,118 US4415851A (en) | 1981-05-26 | 1981-05-26 | System for contactless testing of multi-layer ceramics |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57196540A true JPS57196540A (en) | 1982-12-02 |
JPS6321342B2 JPS6321342B2 (ja) | 1988-05-06 |
Family
ID=23017389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57038254A Granted JPS57196540A (en) | 1981-05-26 | 1982-03-12 | Test device |
Country Status (4)
Country | Link |
---|---|
US (1) | US4415851A (ja) |
EP (1) | EP0066071B1 (ja) |
JP (1) | JPS57196540A (ja) |
DE (1) | DE3272522D1 (ja) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5933996B2 (ja) * | 1981-05-26 | 1984-08-20 | インターナシヨナルビジネス マシーンズ コーポレーシヨン | 未焼結セラミツクの検査装置 |
US4621232A (en) * | 1981-05-26 | 1986-11-04 | International Business Machines Corporation | Inspection of unsintered single layer or multilayer ceramics using a broad area electrical contacting structure |
DE3235461A1 (de) * | 1982-09-24 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur kontaktlosen pruefung eines objekts, insbesondere von mikroverdrahtungen, mit einer korpuskularstrahl-sonde |
DE3235449A1 (de) * | 1982-09-24 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | Flying-spot scanner fuer lichtmikroskopische untersuchungen in einem raster-elektronenmikroskop und verfahren zu seinem betrieb |
DE3579380D1 (de) * | 1984-06-01 | 1990-10-04 | Siemens Ag | Verfahren zur elektrischen pruefung von mikroverdrahtungen mit hilfe von korpuskularsonden. |
US4786864A (en) * | 1985-03-29 | 1988-11-22 | International Business Machines Corporation | Photon assisted tunneling testing of passivated integrated circuits |
US4644264A (en) * | 1985-03-29 | 1987-02-17 | International Business Machines Corporation | Photon assisted tunneling testing of passivated integrated circuits |
US4695794A (en) * | 1985-05-31 | 1987-09-22 | Santa Barbara Research Center | Voltage calibration in E-beam probe using optical flooding |
US5006795A (en) * | 1985-06-24 | 1991-04-09 | Nippon Telephone and Telegraph Public Corporation | Charged beam radiation apparatus |
JPH0682718B2 (ja) * | 1985-08-12 | 1994-10-19 | 日本電信電話株式会社 | 電子デバイスの試験装置およびその使用方法 |
DE3683053D1 (de) * | 1986-10-23 | 1992-01-30 | Ibm | Verfahren zur kontaktfreien pruefung von platinen fuer integrierte schaltungen unter atmosphaerischen bedingungen. |
US4843330A (en) * | 1986-10-30 | 1989-06-27 | International Business Machines Corporation | Electron beam contactless testing system with grid bias switching |
NL8700933A (nl) * | 1987-04-21 | 1988-11-16 | Philips Nv | Testmethode voor lcd-elementen. |
US4812756A (en) * | 1987-08-26 | 1989-03-14 | International Business Machines Corporation | Contactless technique for semicondutor wafer testing |
JPH065691B2 (ja) * | 1987-09-26 | 1994-01-19 | 株式会社東芝 | 半導体素子の試験方法および試験装置 |
US4943769A (en) | 1989-03-21 | 1990-07-24 | International Business Machines Corporation | Apparatus and method for opens/shorts testing of capacitively coupled networks in substrates using electron beams |
US5057773A (en) * | 1989-03-21 | 1991-10-15 | International Business Machines Corporation | Method for opens/shorts testing of capacitively coupled networks in substrates using electron beams |
US4970461A (en) * | 1989-06-26 | 1990-11-13 | Lepage Andrew J | Method and apparatus for non-contact opens/shorts testing of electrical circuits |
US5216359A (en) * | 1991-01-18 | 1993-06-01 | University Of North Carolina | Electro-optical method and apparatus for testing integrated circuits |
DE19525081B4 (de) * | 1995-07-10 | 2006-06-29 | Display Products Group, Inc., Hayward | Verfahren und Vorrichtung zum Testen der Funktion von Mikrostrukturelementen |
US5587664A (en) * | 1995-07-12 | 1996-12-24 | Exsight Ltd. | Laser-induced metallic plasma for non-contact inspection |
US5781017A (en) * | 1996-04-26 | 1998-07-14 | Sandia Corporation | Capacitive charge generation apparatus and method for testing circuits |
KR100544222B1 (ko) * | 1997-01-13 | 2006-04-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼의 결함을 검출하는 방법 및 장치 |
US6504393B1 (en) | 1997-07-15 | 2003-01-07 | Applied Materials, Inc. | Methods and apparatus for testing semiconductor and integrated circuit structures |
US6252412B1 (en) | 1999-01-08 | 2001-06-26 | Schlumberger Technologies, Inc. | Method of detecting defects in patterned substrates |
US6512385B1 (en) | 1999-07-26 | 2003-01-28 | Paul Pfaff | Method for testing a device under test including the interference of two beams |
KR100351059B1 (ko) * | 2000-11-23 | 2002-09-05 | 삼성전자 주식회사 | 반도체 소자의 전기적 결함 검사 장치, 이를 이용한 반도체 소자의 전기적 결함 검사 방법 |
US6359451B1 (en) | 2000-02-11 | 2002-03-19 | Image Graphics Incorporated | System for contactless testing of printed circuit boards |
WO2001058558A2 (en) | 2000-02-14 | 2001-08-16 | Eco 3 Max Inc. | Process for removing volatile organic compounds from an air stream and apparatus therefor |
US7206078B2 (en) * | 2002-05-03 | 2007-04-17 | Attofemto, Inc. | Non-destructive testing system using a laser beam |
US8462350B2 (en) | 2001-12-06 | 2013-06-11 | Attofemto, Inc. | Optically enhanced holographic interferometric testing methods for the development and evaluation of semiconductor devices, materials, wafers, and for monitoring all phases of development and manufacture |
US7400411B2 (en) * | 2001-12-06 | 2008-07-15 | Attofemto, Inc. | Method for optically testing semiconductor devices |
US7733499B2 (en) | 2001-12-06 | 2010-06-08 | Attofemto, Inc. | Method for optically testing semiconductor devices |
US9952161B2 (en) | 2001-12-06 | 2018-04-24 | Attofemto, Inc. | Methods for obtaining and analyzing digital interferometric data for computer testing and developing semiconductor and anisotropic devices and materials |
US7528614B2 (en) * | 2004-12-22 | 2009-05-05 | Applied Materials, Inc. | Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam |
US7176468B2 (en) * | 2004-09-16 | 2007-02-13 | Kla-Tencor Technologies Corporation | Method for charging substrate to a potential |
US7253410B1 (en) | 2005-03-16 | 2007-08-07 | Kla-Tencor Technologies Corporation | Charge-control pre-scanning for e-beam imaging |
US7560939B1 (en) | 2006-02-17 | 2009-07-14 | Kla-Tencor Technologies Corporation | Electrical defect detection using pre-charge and sense scanning with prescribed delays |
US7488938B1 (en) | 2006-08-23 | 2009-02-10 | Kla-Tencor Technologies Corporation | Charge-control method and apparatus for electron beam imaging |
US8586923B1 (en) * | 2012-06-21 | 2013-11-19 | International Business Machines Corporation | Low-voltage transmission electron microscopy |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS518314A (en) * | 1974-07-11 | 1976-01-23 | Sumitomo Shipbuild Machinery | Sementokurinkaano seizohoho |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3373353A (en) * | 1965-09-30 | 1968-03-12 | Navy Usa | Electron beam scanning system for quality control of materials |
US3531716A (en) * | 1967-06-16 | 1970-09-29 | Agency Ind Science Techn | Method of testing an electronic device by use of an electron beam |
US3549999A (en) * | 1968-06-05 | 1970-12-22 | Gen Electric | Method and apparatus for testing circuits by measuring secondary emission electrons generated by electron beam bombardment of the pulsed circuit |
GB1286454A (en) * | 1968-08-24 | 1972-08-23 | Cambridge Scientific Instr Ltd | Surface potential analysis by electron beams |
US3588347A (en) * | 1969-03-13 | 1971-06-28 | Western Electric Co | Method and apparatus for aligning a mask and a substrate using infrared radiation |
JPS4823385A (ja) * | 1971-07-28 | 1973-03-26 | ||
DE2207546A1 (de) * | 1972-02-18 | 1973-08-23 | Ibm Deutschland | Verfahren zum pruefen des elektrischen durchganges |
US3882532A (en) * | 1972-07-03 | 1975-05-06 | Ibm | Externally accessing mechanically difficult to access circuit nodes in integrated circuits |
US3796947A (en) * | 1973-02-27 | 1974-03-12 | Bell Telephone Labor Inc | Electron beam testing of film integrated circuits |
US3961190A (en) * | 1975-03-06 | 1976-06-01 | International Business Machines Corporation | Voltage contrast detector for a scanning electron beam instrument |
DE2702444C3 (de) * | 1977-01-20 | 1980-10-09 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Korpuskularstrahloptisches Gerät zur Abbildung einer Maske auf ein Präparat |
US4139774A (en) * | 1977-02-09 | 1979-02-13 | Hitachi, Ltd. | Apparatus for irradiating a specimen by an electron beam |
JPS5472980A (en) * | 1977-11-24 | 1979-06-11 | Hitachi Ltd | Electron-beam drawing unit |
US4149085A (en) * | 1978-01-16 | 1979-04-10 | International Business Machines Corporation | Automatic overlay measurements using an electronic beam system as a measurement tool |
US4169244A (en) * | 1978-02-03 | 1979-09-25 | Plows Graham S | Electron probe testing, analysis and fault diagnosis in electronic circuits |
DE2823642A1 (de) * | 1978-05-30 | 1980-01-03 | Siemens Ag | Verfahren zur beruehrungslosen potentialmessung an einem elektronischen bauelement |
DE2824308A1 (de) * | 1978-06-02 | 1979-12-13 | Siemens Ag | Verfahren zum einpraegen einer spannung mit einem elektronenstrahl |
US4172228A (en) * | 1978-06-30 | 1979-10-23 | Nasa | Method for analyzing radiation sensitivity of integrated circuits |
US4287473A (en) * | 1979-05-25 | 1981-09-01 | The United States Of America As Represented By The United States Department Of Energy | Nondestructive method for detecting defects in photodetector and solar cell devices |
-
1981
- 1981-05-26 US US06/267,118 patent/US4415851A/en not_active Expired - Lifetime
-
1982
- 1982-03-12 JP JP57038254A patent/JPS57196540A/ja active Granted
- 1982-04-15 DE DE8282103178T patent/DE3272522D1/de not_active Expired
- 1982-04-15 EP EP82103178A patent/EP0066071B1/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS518314A (en) * | 1974-07-11 | 1976-01-23 | Sumitomo Shipbuild Machinery | Sementokurinkaano seizohoho |
Also Published As
Publication number | Publication date |
---|---|
US4415851A (en) | 1983-11-15 |
DE3272522D1 (en) | 1986-09-18 |
JPS6321342B2 (ja) | 1988-05-06 |
EP0066071B1 (en) | 1986-08-13 |
EP0066071A1 (en) | 1982-12-08 |
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