JPS57193067A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57193067A
JPS57193067A JP56077655A JP7765581A JPS57193067A JP S57193067 A JPS57193067 A JP S57193067A JP 56077655 A JP56077655 A JP 56077655A JP 7765581 A JP7765581 A JP 7765581A JP S57193067 A JPS57193067 A JP S57193067A
Authority
JP
Japan
Prior art keywords
layer
type
approx
contacted
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56077655A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6354230B2 (enrdf_load_stackoverflow
Inventor
Sukehisa Hiyamizu
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56077655A priority Critical patent/JPS57193067A/ja
Publication of JPS57193067A publication Critical patent/JPS57193067A/ja
Publication of JPS6354230B2 publication Critical patent/JPS6354230B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56077655A 1981-05-22 1981-05-22 Semiconductor device Granted JPS57193067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56077655A JPS57193067A (en) 1981-05-22 1981-05-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56077655A JPS57193067A (en) 1981-05-22 1981-05-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57193067A true JPS57193067A (en) 1982-11-27
JPS6354230B2 JPS6354230B2 (enrdf_load_stackoverflow) 1988-10-27

Family

ID=13639895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56077655A Granted JPS57193067A (en) 1981-05-22 1981-05-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57193067A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60206074A (ja) * 1984-03-30 1985-10-17 Fujitsu Ltd 電界効果型半導体装置
JPS6110266A (ja) * 1984-06-15 1986-01-17 エイ・ティ・アンド・ティ・コーポレーション 相補型論理構造
JPS61168965A (ja) * 1985-01-23 1986-07-30 Hitachi Ltd 半導体装置
JPS6273674A (ja) * 1985-09-27 1987-04-04 Hitachi Ltd 半導体装置
US4805005A (en) * 1984-10-03 1989-02-14 Hitachi, Ltd. Semiconductor device and manufacturing method of the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60206074A (ja) * 1984-03-30 1985-10-17 Fujitsu Ltd 電界効果型半導体装置
JPS6110266A (ja) * 1984-06-15 1986-01-17 エイ・ティ・アンド・ティ・コーポレーション 相補型論理構造
US4805005A (en) * 1984-10-03 1989-02-14 Hitachi, Ltd. Semiconductor device and manufacturing method of the same
JPS61168965A (ja) * 1985-01-23 1986-07-30 Hitachi Ltd 半導体装置
JPS6273674A (ja) * 1985-09-27 1987-04-04 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
JPS6354230B2 (enrdf_load_stackoverflow) 1988-10-27

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