JPS57191539A - Semiconductor ion sensor - Google Patents

Semiconductor ion sensor

Info

Publication number
JPS57191539A
JPS57191539A JP56076959A JP7695981A JPS57191539A JP S57191539 A JPS57191539 A JP S57191539A JP 56076959 A JP56076959 A JP 56076959A JP 7695981 A JP7695981 A JP 7695981A JP S57191539 A JPS57191539 A JP S57191539A
Authority
JP
Japan
Prior art keywords
area
silicon layer
substrate
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56076959A
Other languages
English (en)
Japanese (ja)
Other versions
JPH027423B2 (enrdf_load_stackoverflow
Inventor
Toshihide Kuriyama
Hiroshi Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56076959A priority Critical patent/JPS57191539A/ja
Publication of JPS57191539A publication Critical patent/JPS57191539A/ja
Publication of JPH027423B2 publication Critical patent/JPH027423B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP56076959A 1981-05-21 1981-05-21 Semiconductor ion sensor Granted JPS57191539A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56076959A JPS57191539A (en) 1981-05-21 1981-05-21 Semiconductor ion sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56076959A JPS57191539A (en) 1981-05-21 1981-05-21 Semiconductor ion sensor

Publications (2)

Publication Number Publication Date
JPS57191539A true JPS57191539A (en) 1982-11-25
JPH027423B2 JPH027423B2 (enrdf_load_stackoverflow) 1990-02-19

Family

ID=13620318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56076959A Granted JPS57191539A (en) 1981-05-21 1981-05-21 Semiconductor ion sensor

Country Status (1)

Country Link
JP (1) JPS57191539A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59183317A (ja) * 1983-03-26 1984-10-18 ドクトル・ヨハネス・ハイデンハイン・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング 参照位置を再生するための装置
JPS6082846A (ja) * 1983-10-12 1985-05-11 Sumitomo Electric Ind Ltd 電界効果型半導体センサ
JPS6150262U (enrdf_load_stackoverflow) * 1984-09-05 1986-04-04
JPS6150263U (enrdf_load_stackoverflow) * 1984-09-05 1986-04-04
JPS63165747A (ja) * 1986-12-26 1988-07-09 Kanegafuchi Chem Ind Co Ltd 非晶質半導体イオンセンサ
US8502277B2 (en) 2003-08-29 2013-08-06 Japan Science And Technology Agency Field-effect transistor, single-electron transistor and sensor using the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59183317A (ja) * 1983-03-26 1984-10-18 ドクトル・ヨハネス・ハイデンハイン・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング 参照位置を再生するための装置
JPS6082846A (ja) * 1983-10-12 1985-05-11 Sumitomo Electric Ind Ltd 電界効果型半導体センサ
JPS6150262U (enrdf_load_stackoverflow) * 1984-09-05 1986-04-04
JPS6150263U (enrdf_load_stackoverflow) * 1984-09-05 1986-04-04
JPS63165747A (ja) * 1986-12-26 1988-07-09 Kanegafuchi Chem Ind Co Ltd 非晶質半導体イオンセンサ
US8502277B2 (en) 2003-08-29 2013-08-06 Japan Science And Technology Agency Field-effect transistor, single-electron transistor and sensor using the same
US8766326B2 (en) 2003-08-29 2014-07-01 Japan Science And Technology Agency Field-effect transistor, single-electron transistor and sensor
US8772099B2 (en) 2003-08-29 2014-07-08 Japan Science And Technology Agency Method of use of a field-effect transistor, single-electron transistor and sensor
US9506892B2 (en) 2003-08-29 2016-11-29 Japan Science And Technology Agency Field-effect transistor, single-electron transistor and sensor using the same

Also Published As

Publication number Publication date
JPH027423B2 (enrdf_load_stackoverflow) 1990-02-19

Similar Documents

Publication Publication Date Title
US4131909A (en) Semiconductor integrated circuit isolated through dielectric material and a method for manufacturing the same
JPS56125868A (en) Thin-film semiconductor device
JPS57176772A (en) Semiconductor device and manufacture thereof
JPS57191539A (en) Semiconductor ion sensor
JPS6430272A (en) Thin film transistor
JPS5559759A (en) Semiconductor device
JPS5574174A (en) Interpolation type insulating gate field effect transistor
JPS57204146A (en) Manufacture of semiconductor device
JPS5575238A (en) Method of fabricating semiconductor device
JPS5763842A (en) Preparation of semiconductor integrated circuit
JPS6489457A (en) Manufacture of semiconductor device
JPS55162270A (en) Semiconductor device
JPS56148863A (en) Manufacture of semiconductor device
JPS5522879A (en) Insulation gate type field effect semiconductor device
JPS57191540A (en) Semiconductor field effect type ion sensor
JPS54143076A (en) Semiconductor device and its manufacture
JPS566448A (en) Mos type integrated circuit device
JPS56133844A (en) Semiconductor device
JPS56158455A (en) Semiconductor device
JPS57176741A (en) Manufacture of semiconductor device
JPS53145485A (en) Production of semiconductor device having serrations on semiconductor surface
JPS5727067A (en) Manufacture of field-effect transistor
JPS56142672A (en) Semiconductor device and manufacture thereof
JPS57206048A (en) Manufacture of semiconductor device on insulating substrate
JPS5464480A (en) Semiconductor device