JPS57171662A - Method and device for vacuum deposition - Google Patents

Method and device for vacuum deposition

Info

Publication number
JPS57171662A
JPS57171662A JP5827781A JP5827781A JPS57171662A JP S57171662 A JPS57171662 A JP S57171662A JP 5827781 A JP5827781 A JP 5827781A JP 5827781 A JP5827781 A JP 5827781A JP S57171662 A JPS57171662 A JP S57171662A
Authority
JP
Japan
Prior art keywords
gas
vapor deposited
source
evaporating
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5827781A
Other languages
Japanese (ja)
Inventor
Masatoshi Takao
Kaji Maezawa
Koichi Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5827781A priority Critical patent/JPS57171662A/en
Publication of JPS57171662A publication Critical patent/JPS57171662A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form uniform vapor deposited thin films of good reoroducibility by using a gas produced by evaporating a liquefied gas as a source for generating gaseous molecular beams to be acted upon the gaseous flow of a vapor deposition material. CONSTITUTION:A vacuum vessel 17 is evacuated to about 10<-5>-10<-6>torr, and a film 6 is vapor deposited by the atoms to be vapor deposited from an evaporating source 3. On the other hand, a liquefied gas 18 is introduced into a molecular beam source cell 1 and is heated by an electric power sourcd 2' and a heater 2, whereby the gas 18 is evaporated and is acted upon a vapor deposition material through an ejection hole 20. At the same time, the rate of evaporation of the gas 18 is controlled. Since the molecular beams scattering from the cell are collimated, they act effectively on the atoms to be vapor deposited from the evaporating source mutually near the film 6 on a cooling roll 7. Hence, the degree of vacuum in the vessel 17 is maintained high except near the places where the molecular beams pass and the thin film of controlled properties is formed efficiently.
JP5827781A 1981-04-16 1981-04-16 Method and device for vacuum deposition Pending JPS57171662A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5827781A JPS57171662A (en) 1981-04-16 1981-04-16 Method and device for vacuum deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5827781A JPS57171662A (en) 1981-04-16 1981-04-16 Method and device for vacuum deposition

Publications (1)

Publication Number Publication Date
JPS57171662A true JPS57171662A (en) 1982-10-22

Family

ID=13079685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5827781A Pending JPS57171662A (en) 1981-04-16 1981-04-16 Method and device for vacuum deposition

Country Status (1)

Country Link
JP (1) JPS57171662A (en)

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