JPS57170582A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS57170582A JPS57170582A JP56055489A JP5548981A JPS57170582A JP S57170582 A JPS57170582 A JP S57170582A JP 56055489 A JP56055489 A JP 56055489A JP 5548981 A JP5548981 A JP 5548981A JP S57170582 A JPS57170582 A JP S57170582A
- Authority
- JP
- Japan
- Prior art keywords
- type
- bragg reflection
- layer
- diffraction lattice
- light output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1215—Multiplicity of periods
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56055489A JPS57170582A (en) | 1981-04-15 | 1981-04-15 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56055489A JPS57170582A (en) | 1981-04-15 | 1981-04-15 | Semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57170582A true JPS57170582A (en) | 1982-10-20 |
JPH0365029B2 JPH0365029B2 (ja) | 1991-10-09 |
Family
ID=13000036
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56055489A Granted JPS57170582A (en) | 1981-04-15 | 1981-04-15 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57170582A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63150981A (ja) * | 1986-12-15 | 1988-06-23 | Toshiba Corp | 半導体レ−ザ装置 |
EP0322180A2 (en) * | 1987-12-19 | 1989-06-28 | Kabushiki Kaisha Toshiba | Grating-coupled surface emitting laser and method for the modulation thereof |
JPH0824357B2 (ja) * | 1992-05-27 | 1996-03-06 | シーメンス ニクスドルフ インフオルマチオーンスジステーメ アクチエンゲゼルシヤフト | スタンバイポジション機能を有する受像管スクリーン装置 |
WO2003019741A3 (en) * | 2001-08-24 | 2004-02-12 | Bookham Technology Plc | Surface emitting laser |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51144656A (en) * | 1975-06-06 | 1976-12-11 | Toshiba Corp | Photo-fiber device |
JPS53118992A (en) * | 1977-03-28 | 1978-10-17 | Toshiba Corp | Semiconductor photo device |
-
1981
- 1981-04-15 JP JP56055489A patent/JPS57170582A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51144656A (en) * | 1975-06-06 | 1976-12-11 | Toshiba Corp | Photo-fiber device |
JPS53118992A (en) * | 1977-03-28 | 1978-10-17 | Toshiba Corp | Semiconductor photo device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63150981A (ja) * | 1986-12-15 | 1988-06-23 | Toshiba Corp | 半導体レ−ザ装置 |
EP0322180A2 (en) * | 1987-12-19 | 1989-06-28 | Kabushiki Kaisha Toshiba | Grating-coupled surface emitting laser and method for the modulation thereof |
JPH0277185A (ja) * | 1987-12-19 | 1990-03-16 | Toshiba Corp | グレーティング結合型表面発光レーザ素子およびその変調方法 |
US4958357A (en) * | 1987-12-19 | 1990-09-18 | Kabushiki Kaisha Toshiba | Grating-coupled surface emitting laser and method for the modulation thereof |
JP2692913B2 (ja) * | 1987-12-19 | 1997-12-17 | 株式会社東芝 | グレーティング結合型表面発光レーザ素子およびその変調方法 |
JPH0824357B2 (ja) * | 1992-05-27 | 1996-03-06 | シーメンス ニクスドルフ インフオルマチオーンスジステーメ アクチエンゲゼルシヤフト | スタンバイポジション機能を有する受像管スクリーン装置 |
WO2003019741A3 (en) * | 2001-08-24 | 2004-02-12 | Bookham Technology Plc | Surface emitting laser |
Also Published As
Publication number | Publication date |
---|---|
JPH0365029B2 (ja) | 1991-10-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4658403A (en) | Optical element in semiconductor laser device having a diffraction grating and improved resonance characteristics | |
EP0169567A2 (en) | Semiconductor laser device | |
US4847844A (en) | Surface-emitting semiconductor laser device | |
JPS57170582A (en) | Semiconductor laser | |
EP0194894A2 (en) | A semiconductor laser | |
US4523316A (en) | Semiconductor laser with non-absorbing mirror facet | |
EP0206745A2 (en) | A semiconductor laser apparatus | |
US4771433A (en) | Semiconductor laser device | |
JPS6045088A (ja) | 半導体発光装置 | |
JPS5814590A (ja) | 半導体レ−ザ | |
JPS57139982A (en) | Semiconductor laser element | |
JPS60152086A (ja) | 半導体レ−ザ装置 | |
JPS55123191A (en) | Semiconductor light emitting device | |
JPS58196084A (ja) | 分布帰還形半導体レ−ザ素子 | |
JPS6392076A (ja) | 半導体レ−ザ | |
JPS59184585A (ja) | 単一軸モ−ド半導体レ−ザ | |
JPH0430759B2 (ja) | ||
JPH01183184A (ja) | 半導体レーザーとその製造方法 | |
JPH0218981A (ja) | 半導体レーザ | |
JPS6410687A (en) | Semiconductor laser device | |
JPS6286781A (ja) | 分布帰還型半導体レ−ザ | |
JPS61279192A (ja) | 半導体レ−ザ | |
JPS62158381A (ja) | 半導体レ−ザ装置 | |
JPS60165782A (ja) | 半導体レ−ザ | |
JPH0430760B2 (ja) |