JPS57166090A - Gamma phase bismuth oxide compound with thin film - Google Patents
Gamma phase bismuth oxide compound with thin filmInfo
- Publication number
- JPS57166090A JPS57166090A JP56051449A JP5144981A JPS57166090A JP S57166090 A JPS57166090 A JP S57166090A JP 56051449 A JP56051449 A JP 56051449A JP 5144981 A JP5144981 A JP 5144981A JP S57166090 A JPS57166090 A JP S57166090A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin
- thin metallic
- metallic film
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 4
- 229910000416 bismuth oxide Inorganic materials 0.000 title 1
- -1 bismuth oxide compound Chemical class 0.000 title 1
- 239000010408 film Substances 0.000 abstract 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 4
- 150000001622 bismuth compounds Chemical class 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8561—Bismuth-based oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To obtain a metallic film favorable to a supersonic deflector, the photomodulator and the like having no unfavorable influence upon the bismuth compound by a method wherein the specified region on the phase oxide bismuth compound belonging to the bismuth silanite group is coated with a thin metallic film whereon the thin metallic film is formed. CONSTITUTION:A thin metallic oxide film 2 comprising TiO or Al2O3.ZrO2. SiO2 and the like is formed on the thin metallic film 3 forming region of the substrate 1 comprising the gamma phase bismuth compound and then said thin film 2 is covered with the thin metallic film 3 comprising Au. Or said substrate 1 is coated with the thin metallic oxide layer 2 comprising TiO2 or Al2O3.ZrO2.SiO2 and the Ti thin metallic film 3 is formed on said layers 2. At this time, said thin film 2 is formed by means of the vacuum evaporation while said thin film 3 is formed by means of the spattering process in Ar. Through these procedures, said film 3 is not easily exfoliated having no unfavorable influence upon said substrate 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56051449A JPS57166090A (en) | 1981-04-06 | 1981-04-06 | Gamma phase bismuth oxide compound with thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56051449A JPS57166090A (en) | 1981-04-06 | 1981-04-06 | Gamma phase bismuth oxide compound with thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57166090A true JPS57166090A (en) | 1982-10-13 |
Family
ID=12887235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56051449A Pending JPS57166090A (en) | 1981-04-06 | 1981-04-06 | Gamma phase bismuth oxide compound with thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57166090A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102774064A (en) * | 2011-05-12 | 2012-11-14 | 中国科学院微电子研究所 | Sensitive adsorption film and manufacturing method thereof |
-
1981
- 1981-04-06 JP JP56051449A patent/JPS57166090A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102774064A (en) * | 2011-05-12 | 2012-11-14 | 中国科学院微电子研究所 | Sensitive adsorption film and manufacturing method thereof |
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