JPS57154829A - Forming method for electrode metal of semiconductor device - Google Patents
Forming method for electrode metal of semiconductor deviceInfo
- Publication number
- JPS57154829A JPS57154829A JP3951181A JP3951181A JPS57154829A JP S57154829 A JPS57154829 A JP S57154829A JP 3951181 A JP3951181 A JP 3951181A JP 3951181 A JP3951181 A JP 3951181A JP S57154829 A JPS57154829 A JP S57154829A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- temperature
- electrode metal
- substrate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 title abstract 2
- 229910052751 metal Inorganic materials 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000007747 plating Methods 0.000 abstract 3
- 229910021332 silicide Inorganic materials 0.000 abstract 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3951181A JPS57154829A (en) | 1981-03-20 | 1981-03-20 | Forming method for electrode metal of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3951181A JPS57154829A (en) | 1981-03-20 | 1981-03-20 | Forming method for electrode metal of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57154829A true JPS57154829A (en) | 1982-09-24 |
Family
ID=12555057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3951181A Pending JPS57154829A (en) | 1981-03-20 | 1981-03-20 | Forming method for electrode metal of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57154829A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05302206A (ja) * | 1992-04-24 | 1993-11-16 | Kyoei Shokai:Kk | ゴム紐を布地へ縫着する方法 |
WO2012084045A1 (en) * | 2010-12-23 | 2012-06-28 | Replisaurus Group Sas | Master electrode for ecpr and manufacturing methods thereof |
-
1981
- 1981-03-20 JP JP3951181A patent/JPS57154829A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05302206A (ja) * | 1992-04-24 | 1993-11-16 | Kyoei Shokai:Kk | ゴム紐を布地へ縫着する方法 |
WO2012084045A1 (en) * | 2010-12-23 | 2012-06-28 | Replisaurus Group Sas | Master electrode for ecpr and manufacturing methods thereof |
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