JPS57154829A - Forming method for electrode metal of semiconductor device - Google Patents

Forming method for electrode metal of semiconductor device

Info

Publication number
JPS57154829A
JPS57154829A JP3951181A JP3951181A JPS57154829A JP S57154829 A JPS57154829 A JP S57154829A JP 3951181 A JP3951181 A JP 3951181A JP 3951181 A JP3951181 A JP 3951181A JP S57154829 A JPS57154829 A JP S57154829A
Authority
JP
Japan
Prior art keywords
layer
temperature
electrode metal
substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3951181A
Other languages
English (en)
Inventor
Masahiko Kizaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Rectifier Corp Japan Ltd
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp Japan Ltd
Infineon Technologies Americas Corp
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp Japan Ltd, Infineon Technologies Americas Corp, International Rectifier Corp USA filed Critical International Rectifier Corp Japan Ltd
Priority to JP3951181A priority Critical patent/JPS57154829A/ja
Publication of JPS57154829A publication Critical patent/JPS57154829A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP3951181A 1981-03-20 1981-03-20 Forming method for electrode metal of semiconductor device Pending JPS57154829A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3951181A JPS57154829A (en) 1981-03-20 1981-03-20 Forming method for electrode metal of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3951181A JPS57154829A (en) 1981-03-20 1981-03-20 Forming method for electrode metal of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57154829A true JPS57154829A (en) 1982-09-24

Family

ID=12555057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3951181A Pending JPS57154829A (en) 1981-03-20 1981-03-20 Forming method for electrode metal of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57154829A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05302206A (ja) * 1992-04-24 1993-11-16 Kyoei Shokai:Kk ゴム紐を布地へ縫着する方法
WO2012084045A1 (en) * 2010-12-23 2012-06-28 Replisaurus Group Sas Master electrode for ecpr and manufacturing methods thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05302206A (ja) * 1992-04-24 1993-11-16 Kyoei Shokai:Kk ゴム紐を布地へ縫着する方法
WO2012084045A1 (en) * 2010-12-23 2012-06-28 Replisaurus Group Sas Master electrode for ecpr and manufacturing methods thereof

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